Allicdata Part #: | SI7456DP-T1-E3TR-ND |
Manufacturer Part#: |
SI7456DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.7A PPAK SO-8 |
More Detail: | N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount P... |
DataSheet: | SI7456DP-T1-E3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 9.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7456DP-T1-E3 is a type of FET (field-effect transistor) that falls into the category of single MOSFETs. It is a high voltage/high speed device, with a maximum drain-source breakdown voltage of 600V and a typical N-channel RDS(ON) of 15-45mΩ. It is typically used in AC/DC offline and isothermal applications, and provides excellent thermal handling characteristics for those applications.
FETs are transistors that use an electric field to control the conductivity of the device. Generally, FETs are either p-channel (negative) or n-channel (positive).The SI7456DP-T1-E3 is an n-channel FET, meaning that electrons flow through the device when voltage is applied to its gate. The device features an integrated ESD structure which helps avoid damage from electrostatic discharge.
MOSFETs (metal-oxide-semiconductor FETs) are an advanced type of FET which are constructed from a conductive channel that is placed between a source and a drain, which are separated by an oxide layer. The channel acts as a switch which can be opened or closed by varying the voltage applied to the gate. The SI7456DP-T1-E3 is a single MOSFET, meaning that it has one channel and one gate.
The SI7456DP-T1-E3 is primarily used in AC/DC offline and isothermal applications. In AC/DC offline applications, the device is typically used to protect circuits against over-current or over-voltage conditions. In AC/DC isothermal applications, the device can handle the fluctuations in temperature that occur during operation. This makes the device ideal for applications where high temperatures or large temperature changes are present.
The working principle of the SI7456DP-T1-E3 relies on its gate-source voltage Vgs. When a voltage of between -4.5 and -7V is applied to the gate source, the device turns on, allowing current to flow between the source and drain. When a gate-source voltage of between 0 and -4.5V is applied, the device turns off, effectively cutting off the connection between the source and drain.
The SI7456DP-T1-E3 is a useful device for AC/DC offline and isothermal applications, due to its high voltage/high speed characteristics. It is also suitable for applications that require ESD protection, as it features an integrated ESD structure. Thanks to its simple working principle, it is easy to understand and operate.
The specific data is subject to PDF, and the above content is for reference
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