SI7485DP-T1-GE3

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Modern technology has brought an exponential increase in components used in electronic devices including transistors and field effect transistors (FETs). One type of single FET is the SI7485DP-T1-GE3, which is well-suited for many applications due to its unique properties and advantages. In this article, we will look at the application field and working principle of the SI7485DP-T1-GE3.

The SI7485DP-T1-GE3 is a single N-channel enhancement mode MOSFET, meaning it is an insulated-gate FET (IGFET) that utilizes the field effect from voltage applied to the gate electrode to control current flow through the body. It is a compact MOSFET that is designed and produced using state-of-the-art trench technology and advanced process technology. This allows for a smaller package size and improved on resistance as compared to other conventional MOSFETs.

The SI7485DP-T1-GE3 is suitable for a wide range of applications such as low-voltage switching and load switching in consumer electronics, automotive electronics, and industrial areas. It is commonly used in systems such as consumer electronics, home appliances, computer systems, and portable electronic devices. Its low threshold voltage and low on resistance make it ideal for supplying high current with low energy consumption, providing improved efficiency over other devices. Its low impedance and gate capacitance also allow for high frequency operation, making it well-suited for applications such as high frequency switching, high power supplies, high speed logic circuits, voltage regulation, and motor protection.

The SI7485DP-T1-GE3 operates on the principle of field effect, meaning the gate electrode is insulated from the source and drain. When a voltage is applied to the gate electrode, it creates an electric field in the channel, which allows electrons to move from the source to the drain. This, in turn, creates an electric current between the source and the drain.

The SI7485DP-T1-GE3 has an off-state threshold voltage of -4V and an on-state threshold voltage of -2V. It has maximum drain-source on-state resistance of 15mΩ, allowing for a maximum drain current of 98A. The device also has a maximum junction temperature of 175°C and a maximum gate-source voltage of +8V.

In summary, the SI7485DP-T1-GE3 is a high performance, single N-channel enhancement mode MOSFET. It is well-suited for a variety of applications, including low-voltage switching, load switching, high frequency switching, high power supplies, high speed logic circuits, and voltage regulation. Its small size and high efficiency makes it particularly well-suited for consumer electronics, automotive electronics, and industrial applications.

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