SI7423DN-T1-GE3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.5W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	56nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	18 mOhm @ 11.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.4A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI7423DN-T1-GE3 is one single MOSFET, or metal–oxide–semiconductor field-effect transistor, used in several applications. This device is often chosen for its high power handling capabilities and ease of application, in addition to its low thermal resistance. In this article, we will take a look at the application field and working principles of this MOSFET.The SI7423DN-T1-GE3 may be applied in a number of different fields, including signal processing, automotive, and communication technology. In signal processing, the MOSFET can be used for switching tasks, high-frequency signal amplification, signal shaping, and analog functionality integration. In automotive applications, the device can be used for switching, pulse control, and lighting applications. In communications, the device can be used for transmission line amplifiers, such as for use with RF, microwave, and cellular communications.The SI7423DN-T1-GE3 is a MOSFET with a Drain-Source breakdown voltage rating of ±25V and a Drain-Source on-state resistance of <0.2Ω. It has an absolute maximum rating of 35V and a maximum operating temperature of 150°C. The device also features an amount of parasitic resistance and capacitance, as well as a gate voltage of 6V maximum.In order to understand the working principles of the device, we must first look at the MOSFET structure. In most MOSFETs, including the SI7423DN-T1-GE3, the three principal terminal connections are the gate, drain, and source. The gate pulls the drain-source channel when it is at a more positive potential than the source. As the source approaches the threshold voltage, the current from drain to source decreases, reducing the flow of current.When using this device, it is also important to consider the body effect. The body effect refers to the fact that increasing the gate voltage will decrease the effective threshold voltage, resulting in more current flow in the drain-source channel.Additionally, the device has a junction capacitance, which is the capacitance found between the drain-source voltage as the gate voltage is varied. This capacitance is useful for signal conditioning, for example, signal switching and filtering. The capacitance also has a very low temperature coefficient, meaning it only varies slightly with temperature.In conclusion, the SI7423DN-T1-GE3 is a single MOSFET with a number of applications in signal processing, automotive, and communication technologies. The device features a breakdown voltage rating of ±25V and a maximum operating temperature of 150°C. Furthermore, the device features a body effect, preventing increased gate voltage from increasing the effective threshold voltage, and has a junction capacitance useful for signal conditioning.

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