SI7459DP-T1-GE3

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The SI7459DP-T1-GE3 is a single N-channel enhancement mode Field Effect Transistor (FET) from Vishay. It is designed for high speed switching applications. The device is a logic level FET with a low and stable gate threshold voltage, making it ideal for driving low voltage logic devices.

Application Field

The SI7459DP-T1-GE3 provides low on-resistance and fast switching capability, making it ideal for many high speed logic and power switch applications. It is commonly used in power supply circuits, power switching applications, switching regulators, motor control circuits, motor drives, and high frequency applications. It can be used in AC/DC or DC/DC converters, LED drivers, mobile phone chargers and mobile DC-DC converters. It is suitable for use in automotive, industrial, and consumer applications.

Working Principle

The device is a logic-level N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It works by allowing electrons to flow from the source to the drain, when a voltage is applied to the Gate pin. The Gate pin is the control element of the device, and it acts as a switch for the current flowing through the transistor. If there is no voltage applied to the Gate pin, then no current will flow through the transistor.

The device uses a special high integrity process called eSIP (Silicon Integral Process), which makes the device more reliable and efficient than conventional power MOSFETS. This process is based on the use of a three-dimensional Super Junction structure that minimizes on-state resistance and reduces gate charge, allowing for faster switching. The device also has a high steady-state avalanche energy rating of up to 697 mJ.

The device is designed to be used in circuits that operate at lower gate-source voltages, typically in the range of 0.8 V to 4.5 V. It can handle 6A of continuous drain current and up to 9A of pulsed load current, making it suitable for use in high current applications. The device can also support a maximum drain-source voltage of 55V.

The device is designed to work safely when exposed to high frequency noise, making it well suited for use in high speed switching applications. It can handle switching frequencies up to 300 kHz, and it can also support up to 30A of peak current for short duration pulses without exceeding its limits.

The SI7459DP-T1-GE3 is a logic level MOSFET, making it an ideal choice for low voltage applications. Additionally, its high temperature operating capability, low on-resistance, and fast switching times make it an ideal choice for many high speed switching applications.

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