SI7454CDP-T1-GE3

Vgs(th) (Max) @ Id:	2.8V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	4.1W (Ta), 29.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	580pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19.5nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	30.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The SI7454CDP-T1-GE3 is a n-channel silicon-oxide-nitride-oxide-silicon (SONOS) Power MOSFET that is suitable for use in applications requiring both high power and low on-state resistance. The MOSFET is manufactured using 90nm Silicon-on-insulator (SOI) technology, and utilizes a double-digit p-channel device for improved performance. This device is well suited for digital power design applications such as AC/DC converters, DC/DC converters and DC/AC inverters.

Application Field

The SI7454CDP-T1-GE3 is suitable for a variety of applications. It is mostly used in AC/DC converters, DC/DC converters and DC/AC inverters. These applications require high power and low on-state resistance. The MOSFET is also used in consumer electronics, power supplies, industrial applications, and automotive applications.

Working Principle

The SI7454CDP-T1-GE3 utilizes a double-digit p-channel device for improved performance. The MOSFET is a OFFF-type functionality MOSFET which allows for the device to be turned off with a minimum of gate voltage. When the gate voltage is increased, the MOSFET is turned on. The drain-to-source on-state resistance is extremely low and is responsible for delivering higher power at lower temperatures. The device is also equipped with ESD protection which helps protect the device under high electrical stress. The ESD protection is provided by the self-passivating silicon nitride layer which acts as an electrical shield and prevents gate oxide breakdown.The MOSFET also features a fast switching speed and very low gate to source capacitance which helps reduce switching losses and improves overall efficiency. Additionally, the device has and a maximum drain current of 8A which allows it to handle large load currents. Finally, the SI7454CDP-T1-GE3 has an extremely low RDS(on) of 6.5mΩ which helps to minimize conduction losses.

Summary

The SI7454CDP-T1-GE3 is a n-channel silicon-oxide-nitride-oxide-silicon (SONOS) Power MOSFET manufactured using 90nm Silicon-on-insulator (SOI) technology. It is mostly used in AC/DC converters, DC/DC converters and DC/AC inverters, as well as in consumer electronics, power supplies, industrial applications, and automotive applications. This device features ONFF-type functionality and a double-digit p-channel device for improved performance. It also has ESD protection, a fast switching speed, and very low gate to source capacitance. Additionally, it has and a maximum drain current of 8A and an extremely low RDS(on) of 6.5mΩ.

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