SI7448DP-T1-E3

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The SI7448DP-T1-E3 is a single N-Channel Trench MOSFET transistor. It offers high density cell design for superior performance in power management applications. The device is manufactured using state-of-the-art fabrication processes to ensure reliable operation. The transistor features a drain-source on-resistance of 179 mΩ (MAX) at 4.5V Vgs, and an improved RDS temperature coefficient which enables high frequency switching. The design also ensures low switching losses. The device is suitable for use in a wide range of applications such as consumer, telecom and automotive.

Application Fields of SI7448DP-T1-E3

The SI7448DP-T1-E3 is designed for use in consumer and telecom applications. It is ideal for use in DC-DC converters, system power supplies, and buck-boost regulators. The device is also well suited for driving high power loads in automotive applications such as 12V to 48V power systems. It is suitable for use in high-frequency DC-DC converters and can handle up to 85A of current. It can also be used for step-down and step-up applications. The device is especially useful in compact designs due to its small form factor.

Working Principle of SI7448DP-T1-E3

The SI7448DP-T1-E3 is a N-Channel Mosfet transistor. It is designed to be used as a switch when required. The transistor consists of three terminals, namely gate, drain, and source. When a voltage is applied to the gate terminal, it changes the resistance of the channel between the drain and source terminals. When the gate voltage is zero, the resistance of the channel is very high, thus no current can flow. When a suitable positive voltage is applied to the gate, the resistance is reduced and current can flow through the channel. This allows the transistor to act as an electronic switch, allowing or denying current flow through it.

The device is manufactured using high-density cell design for improved performance in power management applications. The device has an enhanced temperature coefficient and very low RDS ( resistance drop-state). This allows for high frequency switching with minimal switching losses. The device can also handle high current loads enabling high-efficiency applications. The design also ensures robustness and dependability while in operation.

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