Allicdata Part #: | SI7469DP-T1-E3TR-ND |
Manufacturer Part#: |
SI7469DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 80V 28A PPAK SO-8 |
More Detail: | P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surfa... |
DataSheet: | SI7469DP-T1-E3 Datasheet/PDF |
Quantity: | 42000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.2W (Ta), 83.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 10.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7469DP-T1-E3 is a single P-channel enhancement mode MOSFET. This transistor is a member of the dual SMARTI PowerPAK® MOSFET family and is designed to reduce on-resistance and improve the power efficiency of many types of electrical and electronic devices. This device is designed with a wide voltage range of 30V and provides excellent power handling characteristics. It is a low-cost and energy-efficient solution for many applications.
The SI7469DP-T1-E3 application field is extensive, as this transistor can be used in various types of applications such as switching, power conversion, and load drive. This MOSFET can be used to provide low-level switching, junction protection, and low-impedance applications. It can be used to drive different types of loads like motors and solenoids. Additionally, this device can be used in consumer, automotive, industrial, and avionic devices. This MOSFET is also popular for flyback regulators, boost and buck converters, lighting charging, and low-side, high-side, and universal motor drives.
The basic working principle of the SI7469DP-T1-E3 is simple. It is an enhancement-mode device that operates on the principle of a gate-controlled depletion layer. This transistor has a gate voltage, which is applied to the gate terminal to control the internal gate-source voltage. The gate voltage can be used to control the conductivity of the device. When the gate voltage is low, the conductivity is high and the drain current increases. It is this control of the gate voltage that enables this MOSFET to be used in various applications.
The SI7469DP-T1-E3 can be used to provide high-speed switching, low-level switching, and junction protection. It has a high current carrying capacity, low on-resistance, and low capacitance. This device also provides low power consumption and improved power efficiency. It has a wide voltage range and is built with an advanced process technology. This MOSFET is also optimized to reduce cross-talk and to provide a faster response time. It is also certified for the Automotive Quality Mark standard.
The SI7469DP-T1-E3 is a low-cost single P-channel enhancement mode MOSFET with a wide voltage range and excellent power handling characteristics. It is suitable for many types of applications such as switching, power conversion, and load drive. This device operates on the principle of a gate-controlled depletion layer and can be used to provide high-speed switching, low-level switching, and junction protection. It is an energy-efficient and low-power consumption solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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