SIA411DJ-T1-GE3

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	PowerPAK® SC-70-6
Supplier Device Package:	PowerPAK® SC-70-6 Single
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.5W (Ta), 19W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 8V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	30 mOhm @ 5.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SIA411DJ-T1-GE3 is a type of transistor, also known as a Field-Effect Transistor (FET), and is part of the single MOSFET family. This type of transistor is used in a range of applications, and can be used to turn electrical circuits on and off, as well as to amplify and switch signals. The SIA411DJ-T1-GE3 can provide low on-resistance, low charge injection and low gate threshold voltage.The SIA411DJ-T1-GE3 is a type of N-channel MOSFET, which means it has a single P-channel gate and an N-channel source/drain. In essence, it is an electronic component that controls current flow between the source and drain when it has a small electric charge applied to its gate. This electric charge, often referred to as a “signal voltage”, or “Vgs”, is what controls the on/off operation of the MOSFET.Because MOSFETs have low on-resistance, they have a very efficient current handling capability. Additionally, the SIA411DJ-T1-GE3 has very minimal charge injection, which means that it reduces the direct current component of the input signal, reducing distortion and noise. Furthermore, its low gate threshold voltage, which is a certain amount of voltage that must be applied to the gate in order to turn the device on, is what makes it so useful in many applications. A high gate threshold voltage means the switch must be at a certain voltage to turn it on, while the SIA411DJ-T1-GE3 can turn on at a much lower voltage.As with many types of transistors, the SIA411DJ-T1-GE3 is used in a variety of applications. It is commonly used in voltage-controlled oscillators, power supplies and switches, as well as in logic circuits, analog circuits and digital circuits. Additionally, its low on-resistance makes it ideal for applications where power is limited or where current needs to be shifted quickly, such as RF and microwave systems.The SIA411DJ-T1-GE3 is also widely used in automotive applications, as it can handle a wide range of temperatures and is resistant to damage from overvoltage. It is often used in airbag control modules, electronic locks and drivers for LEDs, as well as other electronic components.The SIA411DJ-T1-GE3 is a versatile and reliable transistor, and its reliability and low power usage make it ideal for a variety of applications. It is an excellent choice for designs where current needs to be shifted quickly and where power is limited.

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