| Allicdata Part #: | SIA408DJ-T1-GE3TR-ND |
| Manufacturer Part#: |
SIA408DJ-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 4.5A SC70-6 |
| More Detail: | N-Channel 30V 4.5A (Tc) 3.4W (Ta), 17.9W (Tc) Surf... |
| DataSheet: |  SIA408DJ-T1-GE3 Datasheet/PDF |
| Quantity: | 3000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
| Package / Case: | PowerPAK® SC-70-6 |
| Supplier Device Package: | PowerPAK® SC-70-6 Single |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.4W (Ta), 17.9W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 36 mOhm @ 5.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SIA408DJ-T1-GE3 is a semiconductor component that belongs to a class of components known as transistors, FETs and MOSFETs – all of which are one-piece devices with charge-storage systems to boost electrical current. As a single, it has one type of conductive material on its source and drain, usually silicon.The actual application field of the SIA408DJ-T1-GE3 depends on a wide range of factors, including its voltage, frequency and current capability. Depending on these capabilities, the SIA408DJ-T1-GE3 is suitable for use in a wide range of industrial applications such as DC motors, inverters, battery chargers, solar cells and many others.The SIA408DJ-T1-GE3 works on the same principle as other transistors. When a small current is applied to the gate (an electrically isolated zone between two terminals on a semiconductor device), the flow of electrons from the drain to the source is increased. This electron movement creates a field effect, which is used to amplify or switch current in the circuit.The MOSFET (Metal-Oxide Field Effect Transistor) works on the same basic principle as the SIA408DJ-T1-GE3, but with an additional layer of insulation between the gate and the source and drain. This insulation layer (known as an insulator) prevents any current from passing between the gate and the source and drain, even if a large current is applied. This makes MOSFETs more efficient at managing large currents than their FET counterparts.The SIA408DJ-T1-GE3 offers a few advantages over other FETs and MOSFETs, including a lower on-resistance, a lower gate-source impedance, and better thermal and electrical conductivity. It also has an integrated power diode for faster switching speeds and improved overall performance.In summary, the SIA408DJ-T1-GE3 is a single-channel transistor which works on the same principle as other FETs and MOSFETs, but with enhanced performance characteristics. It is suitable for use in a wide range of industrial applications that involve the management of large currents, including DC motors, inverters, battery chargers and solar cells.
The specific data is subject to PDF, and the above content is for reference
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