Allicdata Part #: | SIA483DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA483DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 12A SC70-6 |
More Detail: | P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface... |
DataSheet: | SIA483DJ-T1-GE3 Datasheet/PDF |
Quantity: | 75000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 19W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIA483DJ-T1-GE3 is a Field Effect Transistor (FET), more specifically a Metal Oxide Semiconductor FET (MOSFET). This type of transistor is a three terminal compound semiconductor device, with the purpose of acting as a low resistance control switch in a variety of applications.
The SIA483DJ-T1-GE3 has a Specific On-Resistance (RDSon) of 0.48 mΩ at a drain to source voltage of 5V. This allows it to be used in voltage and current limiting circuits, enabling precise control of the level of current in the circuit. It also has a gate threshold voltage of 1.2V, meaning that it can control current at a precise level of up to 1.2V, making it suitable for use in protection and precision circuits.
This particular MOSFET is a single FET, which means that its source, drain and gate terminals are connected to a single sub-assembly. This design allows it to be used in more compact applications, since it takes up less space.
The working principle of this MOSFET is relatively straightforward. When a voltage is applied at the gate terminal, the MOSFET’s ‘insulated gate’ will allow current to flow through the channel connecting the source and drain terminals. The amount of current that is allowed to flow through the device is dependent on the voltage applied to the gate terminal, which means that it can be used to precisely control the amount of current that is allowed in a circuit.
The SIA483DJ-T1-GE3 is a versatile analog device that can be used in a variety of applications. It can be used in audio equipment, power management systems, amplifiers and voltage regulators. Additionally, it can be used in digital logic circuits for data sampling and for controlling the power supply of digital devices.
This single FET from Panasonic is an effective and reliable electronic component that can be used in many applications. It can be used in low voltage applications such as amplifier circuits, as well as higher voltage applications such as motor drivers. While it is a relatively inexpensive component, its powerful features make it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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SIA419DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC70-... |
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SIA433EDJ-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET P-CH 20V 12A SC-70... |
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SIA431DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A PPAK ... |
SIA469DJ-T1-GE3 | Vishay Silic... | 0.11 $ | 3000 | MOSFET P-CHANNEL 30V 12A ... |
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