Allicdata Part #: | SIA450DJ-T1-GE3-ND |
Manufacturer Part#: |
SIA450DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 240V 1.52A SC70-6 |
More Detail: | N-Channel 240V 1.52A (Tc) 3.3W (Ta), 15W (Tc) Surf... |
DataSheet: | SIA450DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 15W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 167pF @ 120V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.04nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.9 Ohm @ 700mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.52A (Tc) |
Drain to Source Voltage (Vdss): | 240V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIA450DJ-T1-GE3 is a single-pole, single-throw (SPST) switch made from a MOSFET. It is typically used as an ON-OFF switch to route signals and power in a variety of circuits and can be used in applications ranging from automotive, commercial and industrial to military systems. This switch is capable of handling drain currents up to 3 Amps and drain-source voltages up to 20 Volts. It also features excellent switching time performance, improved ESD protection and low power consumption.
MOSFET transistors are the most commonly used transistors in the world due to their superior performance and low power consumption. The SIA450DJ-T1-GE3 is a MOSFET with a single-pole, single-throw (SPST) switch configuration. It has a variety of applications in today\'s world, however, the most common application is as a switch in circuits. A switch is a device that can be turned on (closed) or off (open) to control the flow of electricity. This type of switch is widely used in circuits where current must be turned on and off quickly.
The SIA450DJ-T1-GE3 switch is typically switched by two pins; the gate and the drain. The gate is the input side of the switch. A voltage is applied to this pin which controls the current flow through the switch. The drain is the output side of the switch. The voltage difference between the gate and the drain determines whether the switch is on or off. When the gate pin is at a higher voltage than the drain, current will flow and the switch will be on. When the gate pin is at a lower voltage than the drain, no current will flow and the switch will be off. This makes the SIA450DJ-T1-GE3 perfect for high-speed switching applications as well as low-power applications.
The SIA450DJ-T1-GE3 is capable of handling drain currents up to 3 Amps and drain-source voltages up to 20 Volts. It has excellent switching time performance, improved ESD protection and low power consumption. Its compact design also makes it perfect for applications where space is a limiting factor. The switch also has a wide range of operating temperature from –55°C to +125°C and can withstand high voltage transients, making the SIA450DJ-T1-GE3 an ideal switch for a variety of applications.
The SIA450DJ-T1-GE3 is ideal for applications that require switching signals and power quickly and efficiently. It is capable of handling high currents and voltages and has excellent switching time performance, improved ESD protection and low power consumption. It is suitable for applications such as automotive, commercial, industrial, military and communications systems. The SIA450DJ-T1-GE3 is a reliable and cost-effective switch that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIA443DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 9A SC70-6... |
SIA450DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 240V 1.52A SC... |
SIA417DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 12A SC70-6... |
SIA419DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA411DJ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA408DJ-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 4.5A SC70... |
SIA462DJ-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 12A SC-70... |
SIA477EDJ-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET P-CH 12V 12A SC-70... |
SIA411DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA443DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A SC70-6... |
SIA450DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 240V 1.52A SC... |
SIA468DJ-T1-GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET N-CH 30V 37.8A SC7... |
SIA416DJ-T1-GE3 | Vishay Silic... | 0.21 $ | 1000 | MOSFET N-CH 100V 11.3A SC... |
SIA465EDJ-T1-GE3 | Vishay Silic... | 0.12 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA472EDJ-T1-GE3 | Vishay Silic... | 0.12 $ | 1000 | MOSFET N-CH 30V 12A SC70-... |
SIA445EDJT-T1-GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA448DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 12A SC70-... |
SIA445EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC-70... |
SIA437DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 29.7A SC7... |
SIA433EDJ-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET P-CH 20V 12A SC-70... |
SIA425EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.5A SC-7... |
SIA431DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A PPAK ... |
SIA469DJ-T1-GE3 | Vishay Silic... | 0.11 $ | 3000 | MOSFET P-CHANNEL 30V 12A ... |
SIA477EDJT-T1-GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET P-CH 12V 12A SC70-... |
SIA446DJ-T1-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 150V 7.7A SC7... |
SIA466EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 25A SC-70... |
SIA432DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A SC70-... |
SIA427ADJ-T1-GE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET P-CH 8V 12A 6SC-70... |
SIA485DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHANNEL 150V 1.6... |
SIA467EDJ-T1-GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 12V 31A SC70-... |
SIA415DJ-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 12A SC70-... |
SIA461DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA418DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A SC70-... |
SIA406DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 4.5A SC-7... |
SIA440DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 12A SC-70... |
SIA438EDJ-T1-GE3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET N-CH 20V 6A PPAK S... |
SIA439EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 28A SC-70... |
SIA413ADJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 12A SC70-... |
SIA430DJT-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET N-CH 20V 12A SC70-... |
SIA483DJ-T1-GE3 | Vishay Silic... | -- | 75000 | MOSFET P-CH 30V 12A SC70-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...