SIA443DJ-T1-E3 Allicdata Electronics
Allicdata Part #:

SIA443DJ-T1-E3TR-ND

Manufacturer Part#:

SIA443DJ-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 9A SC70-6
More Detail: P-Channel 20V 9A (Tc) 3.3W (Ta), 15W (Tc) Surface ...
DataSheet: SIA443DJ-T1-E3 datasheetSIA443DJ-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 15W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SIA443DJ-T1-E3 is an enhancement mode field effect transistor (FET) for use in various types of electronic devices. It is a dual channel, low-threshold voltage, low gate charge n-channel device that is manufactured using high-performance silicon technology. This device is ideal for a wide range of applications where higher power dissipation, speed, and operational reliability are required.

The SIA443DJ-T1-E3 is designed to operate in a wide range of applications, including audio, VCO, automotive, and general-purpose DC to DC converters. It is capable of operating over a wide range of temperature and voltage conditions, providing a high level of performance and reliability. The device is also capable of operating in extreme environments, making it ideal for applications in the rugged industrial environment.

SIA443DJ-T1-E3 devices are constructed with an enhancement mode p-channel silicon substrate, which is covered by an oxide layer to create an insulated gate. When a voltage is applied to the gate, electrons are drawn onto the oxide layer and create a barrier to the current flowing between the source and drain ends of the device, thus acting as a switch.

The SIA443DJ-T1-E3 can be used as a low-threshold voltage switch in applications such as power switching, audio and automotive, DC to DC converters, and more. It is designed to provide a high on-state current, low on-state voltage, and fast switching times.

The device has a low gate threshold voltage, which makes it suitable for low-power operation, and a low gate charge, which helps reduce power consumption. The device has an excellent thermal performance, allowing a wide temperature range operation, and is rated for up to 600V and 250mA.

The SIA443DJ-T1-E3 is designed to provide a high level of reliability and performance in a wide range of applications. It is a robust device that is reliable and stable even in extreme environments and conditions.

The device is also highly cost effective and can be used in a wide range of applications, including audio, VCO, automotive, and general-purpose DC to DC converters. The SIA443DJ-T1-E3 is a versatile device that offers excellent performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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