Allicdata Part #: | SIA443DJ-T1-E3TR-ND |
Manufacturer Part#: |
SIA443DJ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 9A SC70-6 |
More Detail: | P-Channel 20V 9A (Tc) 3.3W (Ta), 15W (Tc) Surface ... |
DataSheet: | SIA443DJ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 15W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 4.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SIA443DJ-T1-E3 is an enhancement mode field effect transistor (FET) for use in various types of electronic devices. It is a dual channel, low-threshold voltage, low gate charge n-channel device that is manufactured using high-performance silicon technology. This device is ideal for a wide range of applications where higher power dissipation, speed, and operational reliability are required.
The SIA443DJ-T1-E3 is designed to operate in a wide range of applications, including audio, VCO, automotive, and general-purpose DC to DC converters. It is capable of operating over a wide range of temperature and voltage conditions, providing a high level of performance and reliability. The device is also capable of operating in extreme environments, making it ideal for applications in the rugged industrial environment.
SIA443DJ-T1-E3 devices are constructed with an enhancement mode p-channel silicon substrate, which is covered by an oxide layer to create an insulated gate. When a voltage is applied to the gate, electrons are drawn onto the oxide layer and create a barrier to the current flowing between the source and drain ends of the device, thus acting as a switch.
The SIA443DJ-T1-E3 can be used as a low-threshold voltage switch in applications such as power switching, audio and automotive, DC to DC converters, and more. It is designed to provide a high on-state current, low on-state voltage, and fast switching times.
The device has a low gate threshold voltage, which makes it suitable for low-power operation, and a low gate charge, which helps reduce power consumption. The device has an excellent thermal performance, allowing a wide temperature range operation, and is rated for up to 600V and 250mA.
The SIA443DJ-T1-E3 is designed to provide a high level of reliability and performance in a wide range of applications. It is a robust device that is reliable and stable even in extreme environments and conditions.
The device is also highly cost effective and can be used in a wide range of applications, including audio, VCO, automotive, and general-purpose DC to DC converters. The SIA443DJ-T1-E3 is a versatile device that offers excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SIA443DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 9A SC70-6... |
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SIA417DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 12A SC70-6... |
SIA419DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA411DJ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA408DJ-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 4.5A SC70... |
SIA462DJ-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 12A SC-70... |
SIA477EDJ-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET P-CH 12V 12A SC-70... |
SIA411DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA443DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A SC70-6... |
SIA450DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 240V 1.52A SC... |
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SIA465EDJ-T1-GE3 | Vishay Silic... | 0.12 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA472EDJ-T1-GE3 | Vishay Silic... | 0.12 $ | 1000 | MOSFET N-CH 30V 12A SC70-... |
SIA445EDJT-T1-GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA448DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 12A SC70-... |
SIA445EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC-70... |
SIA437DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 29.7A SC7... |
SIA433EDJ-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET P-CH 20V 12A SC-70... |
SIA425EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.5A SC-7... |
SIA431DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A PPAK ... |
SIA469DJ-T1-GE3 | Vishay Silic... | 0.11 $ | 3000 | MOSFET P-CHANNEL 30V 12A ... |
SIA477EDJT-T1-GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET P-CH 12V 12A SC70-... |
SIA446DJ-T1-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 150V 7.7A SC7... |
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SIA432DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A SC70-... |
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SIA415DJ-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 12A SC70-... |
SIA461DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 12A SC70-... |
SIA418DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A SC70-... |
SIA406DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 4.5A SC-7... |
SIA440DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 12A SC-70... |
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SIA413ADJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 12A SC70-... |
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