SIA411DJ-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIA411DJ-T1-E3 is a high-power, high-performance field-effect transistor (FET) designed for use in a wide range of power electronics applications. It has a maximum current rating of 80A and a maximum voltage rating of 250V. The device is ideally suited for use in high-voltage switches, motor controllers, inverters, and DC-DC converters, as well as other power electronics devices.

The SIA411DJ-T1-E3 is a silicon-based, single-gate device, meaning it has a single gate terminal for controlling the transistor’s current. It uses a vertical channel MOSFET structure, which allows it to operate with minimal losses and at high currents. Device features such as its low on-state resistance (RDS(ON)) and low gate driving voltage enable it to switch with rapid rise and fall times, making it an ideal choice for fast switching applications.

The SIA411DJ-T1-E3 uses the dynamic body diode reverse-recovery effect to protect against reverse voltages and currents. This is achieved by using the dynamic diode structure built into the channel of the device. The diode effectively limits the voltage across the drain and source terminals of the device, preventing damage from excessive current. The body diode also has a low forward recovery time, which allows the SIA411DJ-T1-E3 to switch rapidly. This makes it suitable for high frequency applications that require rapid switching times.

The SIA411DJ-T1-E3 has an ESD protection feature that allows the device to withstand electrostatic discharge (ESD) up to 8 kV. This makes it highly suitable for use in portable or movable applications where electrostatic discharge (ESD) is of major concern. The device also features a built-in temperature sensor that allows it to monitor and protect itself from thermal overload. The device is designed to operate at temperatures up to 150°C.

The SIA411DJ-T1-E3 is a versatile device that is ideally suited for use in a wide range of power electronics applications, ranging from motor controllers and high-voltage switches to DC-DC converters, inverters, and other power electronics devices. Its high switching speed and low on-state resistance make it an excellent choice for fast switching applications, while its ESD protection and temperature sensing capabilities make it highly suitable for use in portable and mobile applications.

The specific data is subject to PDF, and the above content is for reference