SIA477EDJ-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIA477EDJ-T1-GE3 is part of a range of power MOSFET transistors manufactured by Infineon Technologies. It is a single N-channel MOSFET amplifier that can be used in a variety of applications. In this article, we will discuss the application fields and working principle of this transistor.

In terms of its application field, the SIA477EDJ-T1-GE3 is used in various switching and power control applications such as relay and low voltage lighting systems, motor control, and power supplies. It is well-suited for applications that require low on-resistance, high efficiency, and low gate charge. Additionally, the fact that it is available in a small, surface-mount package makes it suitable for circuit board-level designs.

The working principle of the SIA477EDJ-T1-GE3 is based on the MOSFET technology, which makes use of a field-effect to control the flow of current between its source and drain terminals. To do this, an electric field is generated in the semiconductor layer located between the drain and source terminals. When a voltage is applied to the gate terminal, it creates an electric field in the semiconductor layer near the gate. Depending on the voltage present at the gate and the field created by it, the electrical resistance between the source and drain terminals increases or decreases, thus controlling the current flow.

The SIA477EDJ-T1-GE3 is rated to handle drain-source voltages of up to 20V and can handle up to a maximum continuous drain current of 0.32A. It has a threshold voltage of 2V and a maximum gate threshold voltage of 4.44V. It also has a total gate charge of 3.8nC, a gate-drain capacitance of 8.7pF, and an on-state resistance of 0.4 Ohms.

The SIA477EDJ-T1-GE3 offers some additional features that make it suitable for a wide range of applications. It has built-in protection diodes to protect against back-EMF, and has a maximum operating temperature of +125°C. It is also RoHS (Restriction of Hazardous Substances Directive) compliant.

In conclusion, the SIA477EDJ-T1-GE3 is a highly efficient single N-channel MOSFET that is suitable for a range of switching and power control applications. It has a high on-state current capacity and a low gate charge, making it ideal for low voltage lighting systems, motor control, and power supplies. Its small form factor and built-in protection diodes make it an ideal choice for circuit board level installations.

The specific data is subject to PDF, and the above content is for reference