SSM6K211FE,LF Discrete Semiconductor Products |
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Allicdata Part #: | SSM6K211FELFTR-ND |
Manufacturer Part#: |
SSM6K211FE,LF |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 3.2A ES6 |
More Detail: | N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount E... |
DataSheet: | SSM6K211FE,LF Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.10639 |
Gate Charge (Qg) (Max) @ Vgs: | 10.8nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ES6 |
Package / Case: | SOT-563, SOT-666 |
Series: | U-MOSIII |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 47 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
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SSM6K211FE,LF is a powerful, low-cost MOSFET device designed for a wide range of applications. It is a single NMOSFET (negative-channel MOSFET) and is rated to operate at 25V 15A. The device is made with a structure of two identical N-channel MOSFETs with a built-in gate clamp to reduce substrate current and provide improved protection. It is available in both surface mount and through-hole packages.
The SSM6K211FE,LF is capable of high-performance power delivery and is suitable for driving loads up to 25V at 15A. Its built-in gate clamp protects the MOSFET from over-voltage conditions and helps to reduce on-state and reverse channel leakage. It has a low gate capacitance and is capable of driving current pulses up to 150A.
The SSM6K211FE,LF is designed for use in a wide range of commercial and industrial applications. It is well suited for power management, motor control, and automotive systems due to its ability to handle high current and its high-power efficiency. The SSM6K211FE,LF is also popular for DC-DC conversion due to its low-noise performance and wide voltage range.
The SSM6K211FE,LF is a versatile and reliable device that provides excellent power management capabilities. Its low gate capacitance reduces switching delay, and its high current capability makes it suitable for a wide range of applications. It is an ideal solution for applications requiring high power efficiency and long-term reliability.
The key to understanding the SSM6K211FE,LF is to understand its working principle. The device works by controlling the flow of charge in an electrical circuit. When a voltage is applied to the gate, the MOSFET creates an electric field that repels electrons, allowing some – and only some – of them to pass through the channel. This effectively regulates the flow of electricity in the circuit, allowing devices to be turned off and on, as well as controlling the voltage and current. This makes MOSFETs useful for a variety of applications, such as power management and motor control.
The SSM6K211FE,LF is an ideal solution for applications requiring high efficiency and long-term reliability. Its low gate capacitance and high current capabilities make it ideal for a wide range of applications, making it an excellent choice for power management, motor control, and automotive systems. It is also popular for DC-DC conversion due to its low-noise characteristics and wide voltage range.
The specific data is subject to PDF, and the above content is for reference
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