Allicdata Part #: | SSM6N15AFELMTR-ND |
Manufacturer Part#: |
SSM6N15AFE,LM |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2N-CH 30V 0.1A ES6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Su... |
DataSheet: | SSM6N15AFE,LM Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.04782 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100mA |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7.8pF @ 3V |
Power - Max: | 150mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 (1.6x1.6) |
Base Part Number: | SSM6N15 |
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,The SSM6N15AFE LM Array, Its Application Field and Working Principle
The SSM6N15AFE LM array is an advanced type of transistor, also known as a Field Effect Transistor (FET). FETs are one of the most commonly used components in the electronic circuitry for controlling the flow of electricity between circuits. The SSM6N15AFE LM array is a type of FET array, which contains multiple FETs connected in series and/or parallel in an integrated device. Each of the FETs in the LM array can be independently switched on or off, allowing for precise control of an electrical signal.
What Is an LM Array?
An LM array is a type of FET array, where multiple FETs are connected either in series or parallel. The benefit of an LM array is that it can be used to control multiple circuits simultaneously, which is particularly useful for applications where there is a need for a lot of power or where it is difficult to create analog circuits. LM arrays are commonly used for power amplifiers, high-voltage switching, and motor control.
Application Field of the SSM6N15AFE LM Array
The SSM6N15AFE LM array is a high-voltage FET array that is highly reliable and well suited for applications where low power dissipation and high output current are required. The SSM6N15AFE is suitable for motor control, power switching, and power amplifier applications. The SSM6N15AFE can be used up to 200V and can provide up to 16A of output current with a very low on-resistance of 8.5mΩ. This low on-resistance and high output current makes the SSM6N15AFE ideal for power conversion applications.
Working Principle of the SSM6N15AFE LM Array
The SSM6N15AFE is a field-effect transistor (FET) array, where multiple transistors are connected in either series or parallel. Each of the FETs in the array can be independently controlled by a gate signal. The gate signal essentially turns the FET ‘on’ or ‘off’. When the FET is ‘on’, the drain-source voltage will be low and a current will flow through the circuit. This current flow can be controlled by controlling the gate voltage of the FET. This is the principle behind the SSM6N15AFE LM array.
Conclusion
The SSM6N15AFE LM array is a high-voltage FET array that is well suited for a variety of applications. It can be used up to 200V and can provide up to 16A of output current with a very low on-resistance of 8.5mΩ. The SSM6N15AFE is commonly used for motor control, power switching, and power amplifier applications. It is based on the principle of field-effect transistors (FETs), which can be individually controlled by a gate signal to turn the FET ‘on’ or ‘off’.
The specific data is subject to PDF, and the above content is for reference
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