SSM6N37FE,LM(T

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The SSM6N37FE and LMFETs are concepts often used interchangeably as they both refer to FETs that feature array configurations. However, they are completely different types of FETs. The SSM6N37FE is part of the SuperFET family by Vishay, while the LMFET is part of the Logic-Level FET series by STMicroelectronics.

What is the SSM6N37FE?

The SSM6N37FE is a type of surface-mount n-channel FET array featuring a variety of advanced characteristics such as wide dynamic resistance range, low on-resistance and extremely small package size. This device is designed for applications such as DC-DC converters, linear regulators, and power over Ethernet (PoE) ports. It is designed to handle up to 75V of drain-source voltage and utilizes low gate charge for improved efficiency and reduced system power consumption.

What is the LMFET?

The LMFET is a single-channel, low-voltage enhancement-mode power FET that provides a low-on resistive path and extremely low gate charge. It is designed to be used in a high-side switch configuration and is capable of handling up to 45V of drain-source voltage. Its low gate charge and on-resistance makes it an ideal solution for applications with limited gate driving power.

Application Field

The SSM6N37FE is well-suited for a variety of applications such as linear and step-down DC-DC converters, motor controllers, and solenoids. In these applications, the SSM6N37FE provides high efficiency, low on-resistance and high power and current levels. The LMFET is more suited for high-side switch operations such as in battery and power management applications, providing high current capabilities, low gate charge, and low on-resistance.

Working Principle

Both the SSM6N37FE and LMFET rely on the same concept of electric field-effect transistors, where an electric field is used to control the current flow between a source and a drain. In an SSM6N37FE, the source and drain are connected to metal-oxide-semiconductor (MOS) gates that are insulated from each other. When a voltage is applied to the source and drain, electric field is induced between the metal electrodes, allowing current to flow between the source and the drain. In an LMFET, the source and gate are insulated, with the gate and drain connected together. By applying a voltage to the source and gate, an electric field is induced between gate and drain, allowing current to flow through the channel.

Conclusion

The SSM6N37FE and LMFET are both types of FET array devices designed for specific applications. The SSM6N37FE is designed for power and current applications, while the LMFET is more suited for high-side switch operations. Both devices rely on the same principle of electric field-effect transistors, yet feature distinct characteristics and operating parameters that set them apart. As such, they are ideal solutions for applications that require both low on-resistance and high power capability.

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