SSM6J53FE(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | SSM6J53FE(TE85LF)TR-ND |
Manufacturer Part#: |
SSM6J53FE(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 20V 1.8A ES6 |
More Detail: | P-Channel 20V 1.8A (Ta) 500mW (Ta) Surface Mount E... |
DataSheet: | SSM6J53FE(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 2.5V |
Rds On (Max) @ Id, Vgs: | 136 mOhm @ 1A, 2.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10.6nC @ 4V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 568pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ES6 (1.6x1.6) |
Package / Case: | SOT-563, SOT-666 |
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The SSM6J53FE(TE85L,F) is a single-gate, field-effect transistor (FET) that has been designed with a variety of applications in mind. The SSM6J53FE(TE85L,F) is an enhancement-use device, which means that there is an increase in its ability to conduct when an electric charge is applied to its gate. This increase in current allows for the device to be used for a variety of applications, ranging from power management and communications to low-noise, high-frequency switching.
The device is constructed from gallium arsenide (GaAs) and provided in a TO-253 package that makes it suitable for both hand soldering and automated assembly. The SSM6J53FE(TE85L,F) can operate over a wide range of voltages (2-18V) and temperatures (0 to +85C). It also features a gold bondwire layer that can reduce performance deterioration in wet conditions or high-temperature operating conditions. Additionally, its high performance, long operating life, and cost-efficiency make it an ideal choice for a variety of different applications.
The SSM6J53FE(TE85L,F) has a variety of applications thanks to its ease of use, reliable performance, and functional flexibility. It can be used as a power switch for relatively low power, such as for signal amplifiers, actuators, and telecom, audio, and industrial applications. It can also be used for signal switching and control, as well as for switching in noise-suppression circuits and signal isolation. Moreover, its wide temperature range makes it suitable for automotive applications, such as power supplies, temperature sensors, and wear monitoring.
The SSM6J53FE(TE85L,F) is designed to work with a variety of gate and drain materials, including gold, silver, aluminum, and nickel. The drain and source currents are symmetrical under a variety of conditions and the channel resistance is low despite its small size. The device is also rated for low input capacitance and has outstanding linearity and noise characteristics. Moreover, its flip-chip design enables it to be used in applications with low-voltage signals.
In general, the SSM6J53FE(TE85L,F) is a capable and cost-effective FET that can be used for a wide range of applications. Its wide temperature range and high linearity make it suitable for automotive applications, while its low noise characteristics and performance consistency makes it suitable for audio and telecom applications. Its small size, gold bondwire layer, and flip-chip design make it easy to integrate into any circuit, and its flexible functionality make it suitable for a variety of different tasks. As such, the SSM6J53FE(TE85L,F) is an ideal choice for any application that requires an efficient and reliable transistor.
The specific data is subject to PDF, and the above content is for reference
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