STB200N6F3

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The STB200N6F3 is a high-voltage, high-current, high-speed N-channel MOSFET. It is based on the latest advance in silicon technology, which has resulted in improved characteristics such as low on-resistance, high switching frequency, temperature stability, low gate charge and excellent avalanche performance. It is suitable for both DC and AC switching applications, supporting operation in high voltage environments up to 200V.

Application Fields

The STB200N6F3 is suitable for a wide range of applications, including power supplies and motor control, high-frequency switching, avionics, energy conversion and alternative energy sources. In particular, the device is well-suited for applications that require control of high current and voltage such as welding and plasma cutting.

The STB200N6F3 is also used in industrial equipment such as robotics, automation, and sensors; in the automotive sector for engine management systems and powertrain control; and in medical applications for power supplies and motion control. Furthermore, the device is popular in consumer electronics for applications such as power management and audio/video switching.

Working Principle

The STB200N6F3 is a type of insulated gate field-effect transistor (IGFET). A IGFET consists of three regions: source, drain and gate. The device works by using an electric field to control the flow of current.

When the gate is not biased, the MOSFET acts as an open switch, with no current flow between the source and the drain. When the gate is biased, it induces a conductive channel of mobile electrons and holes between the source and the drain. As the gate voltage increases, more electrons and holes are induced and current flow is increased, thus turning on the MOSFET.

When the gate is sufficiently biased, the device conducts maximum current and is considered fully on. As the gate voltage decreases, the width of the channel between the source and drain decreases, consequently reducing the current flow. The MOSFET is in its fully off state when the gate voltage is zero.

In order to properly operate the MOSFET, the gate needs to be sufficiently biased, either by a power supply or by an external control device (e.g. microcontroller). Furthermore, the gate voltage should never exceed the maximum VGS threshold of the device, as this could result in permanent damage to the transistor.

In addition to the gate voltage, the on-resistance of the MOSFET is also dependent on the drain-source voltage (VDS). As VDS increases the on-resistance (RDS(on)) increases, thus reducing the amount of current the device can handle.

The STB200N6F3 has a low RDS(on) of 0.12Ω, a low gate charge of 47nC, and a low threshold voltage of 1.9V. It is robust and reliable, with a maximum operating temperature of 175°C.

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