STB200NF04L-1

Transistors - FETs, MOSFETs - Single

The STB200NF04L-1 is a single high-speed power MOSFET from the STB200NFxL-1 family of products from STMicroelectronics. It is a N-channel high voltage MOSFET which features double-sided cooling and a low profile package.

The STB200NF04L-1 MOSFET is used in a wide range of applications, such as power switching and electronic ballast applications. It is suitable for use in high reliability applications, such as automotive and industrial applications. The device is optimized for low switching losses, making it suitable for high frequency applications.

The STB200NF04L-1 is designed to operate in a wide range of voltage and temperature extremes, making it suitable for a variety of applications. It has a maximum drain-source voltage of 200 V, a maximum on-state resistance of 0.11 mΩ and a maximum gate-source voltage of ±20 V. The device is capable of continuous drain currents up to 80 A, at temperatures up to 175°C.

The working principle of the STB200NF04L-1 is based on the “metal oxide field effect transistor” (MOSFET) technology. The device is constructed of a single N-channel MOSFET, which is connected between the drain and source pins. The gate of the MOSFET is connected to an external voltage, which is used to control the voltage and current flow between the drain and source. When the gate voltage is applied, an electric field is produced between the drain and source, which allows the current to flow between them. When the gate voltage is removed, the electric field is removed and the current flow is stopped.

The STB200NF04L-1 MOSFET is an ideal choice for applications such as switching power supplies, solar inverters, motor control, and high frequency DC-DC converters. Its low on-resistance and high speed capability make it highly efficient and reliable in power switching applications.

In summary, the STB200NF04L-1 is a single high-speed power MOSFET from the STB200NFxL-1 family of products from STMicroelectronics. It is suitable for use in a wide range of power switching and electronic ballast applications. Its low on-state resistance and fast switching speed make it suitable for high frequency applications.