STB20NM60-1

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	192W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1500pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 10V
Series:	MDmesh™
Rds On (Max) @ Id, Vgs:	290 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STB20NM60-1 is a type of dual N-channel enhancement mode Field Effect Transistor (FET). This type of transistor is mainly used in the field of power electronics due to its performance characteristics and features.The STB20NM60-1 is composed of two N-channel FETs that are connected in parallel internally. This combination of two transistors allows the STB20NM60-1 to have a larger current carrying capacity and higher current gain than a standard single N-channel FET. The larger current capacity and higher current gain are essential for the application of power electronics. The main purpose of the STB20NM60-1 is to provide a high current and efficient switching device for power electronic applications involving higher currents. The combination of its high current capacity and relatively low on-state resistance makes it an ideal choice for applications like high current DC/DC converters, motor speed controllers, and high power inverters. The STB20NM60-1 transistor works by controlling the flow of current through the two N-channel FETs in parallel. This transistor is usually operated in an enhancement mode, meaning that a positive voltage must be applied to the gate terminal of the transistor in order for current to flow. The more positive the voltage applied to the gate terminal, the more current will be allowed to flow through the drain and source terminals. This allows the STB20NM60-1 to be used as a switch that can be precisely controlled. The STB20NM60-1 has many other beneficial features aside from its high current carrying capacity and high current gain. The transistor has a relatively low parasitic inductance and low gate-drain capacitance. These combined features help to reduce switching losses and improve the efficiency of the power electronics system. Additionally, the STB20NM60-1 also has a fast switching speed which is beneficial in situations where speed is of the essence. Overall, the STB20NM60-1 is a high performance, power electronic transistor that is capable of handling high current applications. It is an ideal choice for applications such as high current DC/DC converters, motor speed controllers, and high power inverters. The combination of its large current capacity, relatively low on-state resistance, and low parasitic inductance make the STB20NM60-1 an attractive option for a wide range of applications.

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