Allicdata Part #: | 497-5382-5-ND |
Manufacturer Part#: |
STB20NM50-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 550V 20A I2PAK |
More Detail: | N-Channel 550V 20A (Tc) 192W (Tc) Through Hole I2P... |
DataSheet: | STB20NM50-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 192W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
STB20NM50-1 is a insulated-gate bipolar transistor (IGBT), which are power semiconductor devices providing efficient and cost-effective solutions for a variety of applications. It is part of STMicroelectronics 500V, 20A family of IGBTs. The STB20NM50-1 combines high speed operation with improved thermal and electrical performance, making it an ideal choice for the power supply design of industrial, electrical, and consumer applications.
Applications
The STB20NM50-1 is suitable for a wide range of applications, some of them including:
- Variable speed drives in industrial and home appliance applications
- High frequency SMPS, DC-DC and AC-DC LED lighting applications
- Uninterruptible Power Supplies (UPS)
- Power supply and lighting equipment for commercial, office and domestic use
Operating principle
The STB20NM50-1 is a field-effect transistor (FET) with an insulated gate, which is typically used for switching applications. The device consists of a source, drain and gate terminals. When a voltage is applied to the gate, the channel is created between the source and drain. current flows through the channel when there is a difference between the source and drain potentials. This type of transistor, known as a metal–oxide–semiconductor field-effect transistor (MOSFET), is commonly used in power supply design due to its high speed and efficiency.
The STB20NM50-1 is capable of operating with high speed, low gate drive voltage and minimal leakage current. These features make it an ideal choice for applications requiring high frequency, low-noise operation. The device can also operate with a low on-resistance and low thermal resistance.
Advantages
The STB20NM50-1 offers a variety of advantages, such as:
- Low on-resistance for high efficiency
- Low gate drive voltage for improved switching performance
- Low thermal resistance for improved thermal performance
- Low leakage current for improved operational stability
Conclusion
The STB20NM50-1 is an ideal choice for applications requiring high speed, low gate drive voltage and minimal leakage current. Its low on-resistance and low thermal resistance make it suitable for a variety of applications, such as SMPS, DC-DC and AC-DC LED lighting, and power supplies. The device provides an efficient, cost-effective solution for a variety of power device applications.
The specific data is subject to PDF, and the above content is for reference
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