STB20N95K5

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The STB20N95K5 MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) is a type of single-gate field-effect transistor (FET) — a type of transistor which works by occupancy or emptying of an electric charge. It excels at controlling surges of current or voltage due to its unique construction, and is commonly employed in applications that require precise electronic control. This article aims to provide an overview of the STB20N95K5 MOSFET, its primary application field, and its working principle.

Overview

The STB20N95K5 is a single-gate FET manufactured in a TO-220AB through-hole package. It caters to a wide range of voltage levels, with a drain-source voltage of up to 900V, a drive voltage of 10V, and a current rating of 20A. The drain-source voltage is the gap between two terminals, or two points in a circuit. The drive voltage is a measure of how much voltage is applied to the gate of the FET in order to switch it from ‘off’ to ‘on’. The maximum current (Ampere) rating defines the maximum current that can flow through the FET.

In order to achieve better efficiency and speed of operation, the manufacturer has also added a number of safety features. For example, the integrated protection diode, which prevents damage due to reverse drain currents, can safeguard the FET from overvoltage and overcurrents without the need for an external diode. It also has temperature sensing capability, so the FET can self-regulate to protect against overheating. The thermal shutdown temperature is set at 160°C.

Application Field

Due to its voltage and amperage ratings, the STB20N95K5 is well-suited for a wide range of home, commercial and industrial applications. The FET is capable of controlling a variety of electronic components and systems including relays, motors, lights and switches. It is also well-suited for controlling powersupply circuits, since it can deliver precise amounts of current and voltage. Other application areas include digital circuits, instrumentation and signal control.

The STB20N95K5 is an especially popular choice in high-power switching applications. This is due to its ability to reduce heat buildup and dissipate energy more quickly than other FETs. In radio-frequency applications, the STB20N95K5 FET can also be used to create a highly accurate adjustable voltage source — thanks to its precise voltage control.

Working Principle

The basic principle of operation of a MOSFET is the same for all types. A voltage or current is applied to the gate of the FET, which then adjusts the amount of current allowed to flow from the drain to the source. The gate, drain and source are all p-type semiconductor regions — each at different potentials. Each region has a different number of mobile electrons, which determine the amount of current that can be passed between the two ends. Since it is a single-gate FET, the gate control cannot be changed by the addition of an external voltage.

In the case of the STB20N95K5, the channel has an electrically neutral region between the gate and drain, called the channel depletion region. This region is formed as a result of the positive charge of the gate with respect to the negative ionised source region. This creates an internal electric field and acts as a gate controlling the flow of current in the channel. As the gate-source voltage increases, the field increases and so does the amount of current allowed to flow between the drainsource. This is how the STB20N95K5 can precisely control the current or voltage flowing through its channel.

In conclusion, the STB20N95K5 is a single-gate FET which is used in applications that need precise electronic control. It excels at controlling surges of voltage and current, thanks to its integrated protection diode and temperature sensing capabilities. Its main application areas are high-power switching, powersupply circuits, digital circuits, instrumentation, and signal control. The FET is able to control voltage and current precisely by employing a channel depletion region between the gate and the drain, which is caused by a positive charge of the gate relative to the source region.

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