STB25NM50N

STB25NM50N Application Field and Working Principle

STB25NM50N is a large current, high speed switching power MOSFET transistor that belongs to the single-series FETs, MOSFETs. With a power dissipation of up to 700W and a current capacity of 77A, STB25NM50N is most-suitable for switching power supply, DC-DC conversion, amplifier, inverter and other applications.

Application Field

STB25NM50N is suitable for high power applications and a major component for switching power supplies, DC-DC converters and inverters. Due to its power handling capabilities and good thermal performance, STB25NM50N is used in many industries, such as computing, automotive, audio/video, telecom and military.

For computing applications, STB25NM50N is applied in gaming consoles, portable computers and servers. The design requirements of these devices are more complex and they require a higher stability and higher reliability compared to ordinary electronic equipment. As one of the most important components in high-end systems, STB25NM50N helps to provide a more stable power supply while lowering power consumption.

For automotive applications, STB25NM50N is applied in electric vehicles, fuel injection systems, automatic transmission, engine control system and electric steering wheel. STB25NM50N helps to increase the load current and improve the vehicle\'s overall running safety.

For audio/video devices, STB25NM50N is applied for the power amplifier in audio systems, broadcasting and television. Its larger power handling capabilities and higher frequency response can help to create a higher fidelity sound and picture.

For telecom and military applications, STB25NM50N is used in base stations, missiles, satellites and other devices. Its larger power handling capacity and lower power consumption make it ideal for military usage, and its better thermal performance allows it to work longer in extreme environments.

Working Principle

STB25NM50N is a three-terminal, N-channel enhancement-type power MOSFET transistor. It mainly consists of two main components, an insulated gate and a source-drain region. The insulated gate can conduct electric current in either direction between the source and the drain, thus controlling the on and off of the current.

When the gate voltage is higher than the threshold voltage of the transistor, it will enter the “on” state, allowing current to pass between the source and the drain. With the increase of the gate voltage, the current passing between the source and the drain will increase as well. When the gate voltage is lower than the threshold voltage, the transistor will enter the “off” state, which does not allow any current to pass through between the source and the drain.

In addition, STB25NM50N also has an internal protection layer that can protect the device from over-voltage and over-current. The maximum power dissipation of STB25NM50N is up to 700W and the current capacity is 77A. The internal protection layer helps to eliminate the risk of damaging the device due to over-current and over-voltage.

Conclusion

STB25NM50N is a high performance power MOSFET transistor with a power dissipation of up to 700W and a current capacity of 77A. The device has a wide range of applications in the computing, automotive, audio/video, telecom and military industries due to its high power handling capabilities and better thermal performance. Device works in a simple manner, and its internal protection layer can protect the device from over-voltage and over-current.