Allicdata Part #: | 497-6548-2-ND |
Manufacturer Part#: |
STB200NF03T4 |
Price: | $ 1.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 120A D2PAK |
More Detail: | N-Channel 30V 120A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | STB200NF03T4 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.33178 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4950pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB200NF03T4 is a N-channel technology insulated-gate bipolar transistor (IGBT) based on a metal-oxide-semiconductor field-effect transistor (MOSFET) technology. It is a very popular device today as it has both bipolar current and power capabilities in a single package. Also, this device offers a high frequency switching performance which makes it suitable for high-power applications such as motor control, power supplies, and power switching.
The STB200NF03T4 is widely used in a variety of applications and is ideal for applications where the switching frequency needs to be kept low. This device offers high speed operation, low input capacitance, and high input impedance which makes it ideal for power switching, motor control, and power supplies. It is also an excellent choice for applications where high power output is desired while keeping the power consumption low. It has also been used in automotive applications such as motor control and power switching.
The working principle of STB200NF03T4 is quite simple. It is composed of two transistor sections that operate in conjunction with each other in order to allow current to flow either into or out of the device. When a voltage is applied to the gate of the device, a channel (or field) is created between the drain and the source. This channel is known as a depletion region and is responsible for controlling the current flow. The current is then passed through a p-n-p-n semiconductor junction, which controls the current flow direction and magnitude.
When the voltage at the gate is increased, the channel becomes larger which in turn allows more current to flow. As the voltage decreases, the channel becomes smaller and the amount of current that can be passed through decreases. This allows the STB200NF03T4 to be used to regulate the amount of current that is flowing into or out of the device. It is also used to help control the power consumption in a circuit. This makes it an ideal choice for applications where power efficiency is paramount.
The STB200NF03T4 is a great choice for applications where high power and current capability are needed. It is also perfect for applications where speed and low power consumption need to be balanced. This device offers high-speed switching and low input capacitance making it an excellent choice for power switches, motor control, and power supplies. It is also highly reliable, meaning it will perform well for a long period of time, making it a great choice for applications where long term operation is desired.
The specific data is subject to PDF, and the above content is for reference
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