STB27NM60ND

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STB27NM60ND is an N-channel power MOSFET developed by STMicroelectronics. It is a medium power MOSFET with a maximum drain-source voltage of 600V, a typical threshold voltage of 1.26V, and a maximum gate-source voltage of +/- 20V. It has an on-state resistance of 8.9mΩ and a maximum drain current of 43A. This power MOSFET is ideal for high efficiency, low noise operation and low on-state resistance.

The application of STB27NM60ND MOSFET is mainly in power electronic products such SMPS, switch mode power supplies, electronic light ballasts, DC-to-DC converters and bi-directional switch circuits. It is also used as a switch in motor control devices, including brushed and brushless DC (BLDC) motor applications.

In terms of operation, STB27NM60ND is an N-channel power MOSFET designed to conduct electrons from the drain to the source. The main element of the operation is a FET gate which controls the amount of current conducting through the N-channel MOSFET. When the gate voltage is zero, no current flows between the source and drain. When a gate voltage is applied, the MOSFET is activated, allowing a certain amount of current to flow between the source and drain. The current that transports in the channel is a consequence of the minority carriers (electrons) due to the gate potential.

As far as the voltage of the drain is concerned, the gate-source voltage must be sufficient enough to overcome the threshold voltage, Vth, of the MOSFET. This voltage determines the channel resistance and the maximum current that can be drawn from the drain. On the other hand, the ability of the FET to conduct electrons depends on the amount of gate voltage applied. A higher gate voltage will activate more of the drain-source channel and, consequently, a higher current will flow.

When the drain voltage exceeds the threshold voltage, Vth, the electrons can easily transport between the source and the drain. The threshold voltage (Vth) is also known as the “turn-on” voltage and it increases as the temperature increases. The “turn-off” voltage is the drain voltage at which the current is scaled off, usually referred to as the off-state or “cut-off” voltage.

In conclusion, STB27NM60ND is an N-channel power MOSFET specifically designed for applications requiring high efficiency, low noise operation, and low on-state resistance. The MOSFETs’ working principle is based on controlling the amount of current conducting through the N-Channel MOSFET, as a consequence of the gate voltage applied. This allows a certain degree of current to flow between the source and drain and the MOSFET can be used in a wide range of applications including power electronic products, DC-to-DC converters and motor control devices.

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