STB25NF06LAG Allicdata Electronics
Allicdata Part #:

497-17141-2-ND

Manufacturer Part#:

STB25NF06LAG

Price: $ 0.37
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CHANNEL 60V 25A D2PAK
More Detail: N-Channel 60V 25A Surface Mount D²PAK
DataSheet: STB25NF06LAG datasheetSTB25NF06LAG Datasheet/PDF
Quantity: 1000
1000 +: $ 0.34233
Stock 1000Can Ship Immediately
$ 0.37
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): --
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: --
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STB25NF06LAG is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) which is designed for use in circuits where high speed, low noise and low power consumption are desired characteristics. This device features an insulated-gate bipolar transistor (IGBT), which enables it to switch between high and low states faster than traditional transistors. The STB25NF06LAG is part of a class of devices known as low-side MOSFETs, which are frequently employed in power management applications such as switching regulators or LED driver circuits.

In a standard MOSFET, an electric field between the source and the gate is used to control the flow of current between the source and the drain. The STB25NF06LAG, however, incorporates an IGBT into the source-gate structure, instead of a separate power transistor. This allows the voltage applied to the gate to act as both a control voltage and a power voltage, reducing the amount of current needed to control the flow of current between the source and drain.

The STB25NF06LAG features a low minimum gate threshold voltage of 1.5V and a low drain-source on-resistance of just 10 mΩ. This makes it ideal for use in switch-mode power supplies and other low-voltage applications. Its maximum allowable drain-source voltage is 60V, which enables use in many high-voltage applications as well, such as power inverters and motor controllers. It also offers a very low gate capacitance, which reduces power loss and improves switching speed.

The STB25NF06LAG is designed to operate in temperatures between -55°C and 150°C, making it ideal for automotive, medical, and industrial applications. It also provides a high level of ESD protection and is resistant to electrical noise and transient voltages, ensuring reliable operation in even the most demanding environments.

In general, the STB25NF06LAG can be used in a variety of applications where low-side MOSFETs are required. It is suitable for use in switch-mode power supplies and other low-voltage applications, as well as for motor control and inverter circuits. It is also well-suited for use as a general-purpose low-side/high-side switch. Due to its low gate threshold voltage and low drain-source on-resistance, it offers excellent performance in many applications, while its high temperature range and ESD protection make it a reliable choice for use in various industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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