STB21NM50N

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STB21NM50N is a part of a family widely used to adjust electrical and electro-mechanical control systems, including frequency inverters and uninterruptible power supply systems. It is a high voltage insulated gate bipolar transistor (HVIGBT) or a high voltage insulated gate field effect transistor (HVIGFET) with a high power and high frequency capability. STB21NM50N is a single FET (Field Effect Transistor) type device that is primarily used as an electronic switch or an amplifier. It is commonly used in power control electronic circuits, such as motor controllers, audio amplifiers, and power converters. The device can also be used in other applications where a device with high switching speed is needed.

The STB21NM50N is a voltage controlled semiconductor device that operates on the principle of three-terminal (source, gate and drain) inversion. The source terminal of the device is connected to the power source, while the gate terminal is connected to a control voltage. When a voltage is applied to the gate, it attracts electrons from the source, creating an inversion layer at the interface between the source and the gate. This inversion layer allows current to flow from the source to the drain, effectively switching the device on. When the voltage applied to the gate is removed, the electrons are no longer attracted, and the inversion layer collapses. This collapses the current in the channel and the device is switched off.

STB21NM50N is most commonly used in switching power supplies, including computer power supplies, ultrasonic cleaning systems, and other similar applications. The device is also used in controlling power supply in automotive applications, such as controlling starter motors, as well as in household appliances, such as refrigerators, among others. It is also used in military and aerospace applications, such as space shuttles, aircraft, and other vehicles requiring reliable electronics. In addition, STB21NM50N is used in audio amplifiers and other audio devices, as well as video and digital signal processing applications.

The STB21NM50N is a robust and reliable device. It has a high junction temperature rating of up to 175°C and a wide operating temperature range from -55°C to 175°C. It also has a wide operating voltage range from -600V to 600V. The device has a fast switching capability, with a maximum switching frequency of 200kHz. It also has a low on-resistance of 1.1 ohm, making it suitable for high power applications.

The STB21NM50N is an ideal device for switching and controlling power, as it offers a high speed, low on-resistance, robust construction and wide operating temperature range. It is a reliable, cost effective and highly efficient device, making it the perfect choice for many applications.

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