STB26NM60ND

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	190W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1817pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	54.6nC @ 10V
Series:	FDmesh™ II
Rds On (Max) @ Id, Vgs:	175 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<h2>STB26NM60ND Application Field and Working Principle</h2><p>STB26NM60ND is a type of Insulated Gate Bipolar Transistor (IGBT), which is a combination of bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). STB26NM60ND is a single high power (26A) device with low switching losses and fast switching speed, specified for use in medium-power applications such as renewable energy systems, power factor correction (PFC) and general motor drives.</p><h3>Application Field</h3><p>STB26NM60ND is optimized for use in applications that require low switching losses and fast switching speeds, such as renewable energy systems, power factor correction (PFC), and general motor drives. This device is ideal for solar, wind and water turbine systems, as it can be quickly switched on and off in order to maintain a constant power output. The device is also suitable for motor control systems, as it can be used to precisely control motor speeds and torques. Additionally, STB26NM60ND can be used in power factor correction (PFC) systems, where its high power rating makes it suitable for applications that require high performance and reliable operation.</p><h3>Working Principle</h3><p>The working principle of STB26NM60ND can be described as follows. When a voltage is applied to its gate terminal, a conductive channel is formed in the device by downward electric field. When this happens, electrons can flow freely from the negative terminal (the source) to the positive terminal (the drain), allowing a current to flow. By controlling the voltage applied to the gate, the resistance of the channel (and consequently, the current flow) can be controlled.</p><p>Since STB26NM60ND is a combination of a BJT and a MOSFET, it has the combined advantages of both technology: the high current gain of BJT and the low switching losses of MOSFET. This makes STB26NM60ND an ideal device for high power applications such as renewable energy systems, power factor correction (PFC) and motor control.</p><h3>Advantages</h3><p>The main advantages of using STB26NM60ND in applications such as renewable energy systems, power factor correction (PFC) and motor drives are its high power rating, low switching losses, and fast switching speed. The device is rated for 26A, which enables it to handle high power applications. At the same time, the low switching losses enable the device to operate at higher efficiency and the fast switching speed ensures that the device can be switched on and off quickly, which makes it suitable for applications that require precise control.</p><h3>Conclusion </h3><p>In conclusion, STB26NM60ND is a single high power Insulated Gate Bipolar Transistor (IGBT) device with low switching losses and fast switching speed, ideal for applications in renewable energy systems, power factor correction (PFC) and motor control.</p>

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