STB26NM60N Discrete Semiconductor Products

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The STB26NM60N is a n-channel MOSFET transistor manufactured by STMicroelectronics, a large corporation specializing in the production of semiconductor products. The MOSFET is part of the ST series range and is designed for applications that need a high switching frequency.

Applications of the STB26NM60N range from industrial and consumer electronics to automotive applications. The MOSFET can be used for general purpose switching, for motor control, and for high-speed power management applications. The STB26NM60N is also commonly used in motor drives, switching supplies, and power converters, as well as low power lighting and AC power management.

The STB26NM60N MOSFET is a single-channel, enhancement-mode device that is capable of operating up to 450 Volts and can handle up to 21 amps. The device has an on-resistance of 6.7mOhms at 10V, which makes it suitable for high-frequency operation. This low on-resistance allows the device to switch faster than other MOSFETs, making it ideal for high-speed applications.

The STB26NM60N MOSFET is designed for a wide range of voltages, temperatures, and currents. It also has a low gate charge, which a lower total gate charge than most MOSFETs, making it more efficient. Additionally, the device features a very low reverse-recovery time, which reduces power losses.

The STB26NM60N MOSFET has a fast switching time and low gate charge, both of which contribute to its efficiency and performance. The device also features low on-resistance, which enables a low quiescent current, resulting in a low loop parasitic inductance. This makes the device suitable for use in high-frequency applications with a low output impedance.

The device also has a low total gate charge of approximately 9.3nC, which ensures less power consumption and improved efficiency. Its diode-emulated cells also provide protection against fast transients and over-voltage conditions. The STB26NM60N is also equipped with a body diode, providing protection against short circuits, as well as providing a better reverse blocking performance.

The working principle of an STB26NM60N MOSFET involves the transfer of electrons from the drain to the source of the device, which is controlled by the gate. When the gate receives an appropriate voltage, electrons flow from the channel region to the source, creating a conduction current. This is because the source-gate voltage is higher than the threshold voltage on the channel and electrons can flow freely. The device also relies on the presence of a free-flowing drift region, as well as the presence of electric fields and carrier concentration to control current flow.

The device can be used as a switch in many applications, such as power management and motor control, by controlling the amount of current and voltage applied to the drain. The STB26NM60N can also be used for low power lighting and AC power management, providing protection against over-voltage and fast transient conditions. This device is an efficient and reliable transistor for a variety of applications.

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