Allicdata Part #: | 497-8473-2-ND |
Manufacturer Part#: |
STB25NM60ND |
Price: | $ 3.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 21A D2PAK |
More Detail: | N-Channel 600V 21A (Tc) 160W (Tc) Surface Mount D2... |
DataSheet: | STB25NM60ND Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.87554 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STB25NM60ND is a new type of transistor in the field of power MOSFETs that is widely used in various applications today. It belongs to a single Power MOSFET family, which is well-suited for numerous power applications since it is highly efficient and cost-effective.
From the structural point of view, the STB25NM60ND is a N-channel enhancement-mode power MOSFETs that is specifically designed to withstand high voltages and achieve high efficiency power outputs. The device consists of a vertical double side-wall MOSFET structure having a high concentration of impurity regions that are arranged in a co-centrically symmetric manner. This structure allows for higher performance with greater reliability and stability.
In terms of its operation and working principle, this power MOSFET is controlled by a gate voltage applied to the gate terminal of the device. The magnitude of the gate voltage is proportional to the current flowing through the source and drain terminals. When the gate voltage reaches a certain threshold level, the MOSFET turns on and conducts current, allowing current flow between the source and the drain terminals.
The highest operating temperature range of the STB25NM60ND device is 175°C, which means that it is highly efficient and suitable for use in high temperature application. Additionally, the device has built-in ESD protection in its structure, which enables a high level of ESD protection against voltage spikes.
The power dissipation of the STB25NM60ND is excellent, and it features very low gate charge. Its gate input capacitance is around 7nF, which significantly reduces switching losses. Additionally, the device offers excellent thermal stability, and can even withstand temperatures up to 175°C.
The STB25NM60ND has a drain current of 25A and a drain-source voltage (VDS) of up to 600V, making it an excellent power MOSFET for a wide range of applications. It can be used in both low and medium frequency switching applications, such as motor control, lighting control, AC switching, and DC/AC converter control. Thanks to its features, such as low gate and switching losses, high current rating and ESD protection, the STB25NM60ND is a great choice for various power and other applications.
The specific data is subject to PDF, and the above content is for reference
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