STB23N80K5

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The STB23N80K5 is a Switching N-Channel enhancement mode silicon gate power Field-Effect Transistor (FET), which is a type of single MOSFET(metal oxide semiconductor FET). It is housed in a two-terminal package with available voltage ratings of 800V and 23A.

One of the most common application fields of the STB23N80K5 is in DC to AC invertors, where it is used to switch loads with high efficiency and produce square waveforms. It can also be found in motor control and switching power supply, where it is used to regulate the chopper level, thereby improving surge suppression capability and power factor.

The working principle of the STB23N80K5 is based on Field-Effect Transistor (FET) technology. Inside the transistor, when a positive voltage is applied to the gate terminal, it pushes away electrons from the channel and the electrons from the drain terminal fill in the vacant area. This forms a positive current flow in the channel between the source and drain. This current is known as “channel conduction”. By controlling the amount of channel conduction and the associated voltage drop between source and drain, one can easily control the amount of power applied to a given load.

The STB23N80K5 is equipped with various features that make it suitable for use in high power applications. It has an Epoxy-sealed construction that ensures protection against environmental corrosion and various impurities. It is also capable of withstanding high surge currents, and has Built-In ESD-protection that prevents damage due to ElectroStatic Discharge.

Other features include an anti-parallel drain-source body diodes for protection against reverse voltage, and a low gate charge for reducing switching losses. It also has a built-in thermal shutdown feature that can protect the device from continuous over-temperature operation. Moreover, it has a low on- resistance that provides high performance and low gate drive requirements, which makes it suitable for use in high frequency switching applications.

In conclusion, the STB23N80K5 is a Switching N-Channel enhancement mode silicon gate power Field-Effect Transistor (FET) suitable for use in high power applications such as DC to AC invertors or motor control and switching power supply. Its working principle is based on FET technology and its features include Epoxy-sealed construction, built-in ESD-protection, anti-parallel drain-source body diodes, low gate charge, thermal shutdown feature, and low on-resistance.

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