Allicdata Part #: | 497-13639-2-ND |
Manufacturer Part#: |
STB20N65M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 18A D2PAK |
More Detail: | N-Channel 650V 18A (Tc) 130W (Tc) Surface Mount D2... |
DataSheet: | STB20N65M5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1434pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STB20N65M5 transistor is a modern power MOSFET that has become a go-to choice for high-current switching applications. It is a high-voltage, N-channel MOSFET with a drain-source voltage (Vds) rating of up to 650 V and a drain-source current rating of up to 20 A. The power dissipation rating is 120 W, making the STB20N65M5 an ideal choice for high-current switching applications such as motor control and power supplies. The gate-source voltage (Vgs) rating of this particular MOSFET is from -20 V to +20 V and the gate-source current (Igs) rating is up to 300mA.
Application Field
The STB20N65M5 is suitable for a variety of applications, but its high current handling, high voltage rating and low power dissipation make it an ideal fit for motor control circuits, power supplies, and solenoids. This MOSFET can also be used in power distribution systems, fast switching circuits and high-power amplifier circuits. The STB20N65M5 can be used in many other types of digital, analog and RF circuits, such as Class D audio amplifiers, pulse-width-modulation (PWM) circuits, and voltage converter applications.
Working Principle
The working principle of the STB20N65M5 is similar to that of other MOSFETs. It is a “controlled charge carrier device,” meaning it is capable of conducting and modulating voltage by using the principle of the junction capacitor. When a positive voltage is applied to the gate of the MOSFET, the metal-insulator-semiconductor (MIS) structure creates a potential barrier. This potential barrier, known as a depletion region, restricts the movement of electrons, thus prevents current conduction between the source and the drain. If a negative voltage is applied at the gate, the potential barrier dissipates and current conduction is enabled.
The STB20N65M5 also incorporates self-protection features, allowing the device to withstand a greater amount of operating voltage and current than other standard MOSFETs. It features built in sensing devices, such as its temperature-sensing diode, as well as current and voltage limiters, to ensure that its operation is safe and reliable over time.
The STB20N65M5 is a powerful, yet efficient, transistor that is ideal for high-current switching applications. Its high voltage rating gives it a wide range of applications, while the self-protection features ensure that it is both safe and reliable. With its high current handling, low power dissipation, and temperature-sensing diode, the STB20N65M5 is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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