Allicdata Part #: | 497-5312-2-ND |
Manufacturer Part#: |
STB20NM50T4 |
Price: | $ 1.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 550V 20A D2PAK |
More Detail: | N-Channel 550V 20A (Tc) 192W (Tc) Surface Mount D2... |
DataSheet: | STB20NM50T4 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.70402 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 192W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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MOSFET is the acronym for metal-oxide Semiconductor Field Effect Transistor. It is a type of transistor that utilizes the electrical property of a semiconductor material, such as silicon, to provide electric current through an external voltage applied to the transistor\'s gate terminals. The STB20NM50T4 is a N-channel Enhancement-mode MOSFET, one of the most widely used type of MOSFET. The STB20NM50T4 has quite a few common various applications and its working principle is relatively simple.
Applications
The STB20NM50T4 is commonly used for several types of circuit applications including switching, amplifying, and driving a load. It is usually employed for low-power applications, since it dissipates only a limited amount of power. Thus, it is ideal for use in audio amplifiers, voltage steering applications and controlling electrical motors. Additionally, the STB20NM50T4 is a great choice for providing power to noise reduction circuits, since it creates a minimal amount of noise.
Working Principle
The working principle of the STB20NM50T4 is based on semiconductor material, such as silicon. As previously mentioned, the STB20NM50T4 is a N-channel Enhancement-mode MOSFET and it works by applying a minimal voltage to the gate terminal, and then this energy flows through the other terminals of the device, to enable low-power switching or current-control applications. The gate terminal of the STB20NM50T4 works as a microscopic electrical switch, that, when activated, produces a controlled voltage that provides the desired current flow through the device.
For example, in the case of amplifier circuits, the gate voltage of the STB20NM50T4 is connected to the audio signal source and its other terminals are connected to ground. Thus, the varying audio signal applied to the gate terminal of the STB20NM50T4 results in fluctuating voltage that, in turn, switches the power transistors, which produce amplifying effect on the resulting sound.
The STB20NM50T4 also has great protection abilities. Since it is a voltage operated device, it is capable of blocking reverse voltage, thus it can protect other components from over-voltage damage. Consequently, the STB20NM50T4 can be also used in power or voltage regulators, or as a clamp element to protect other components. In these applications, the STB20NM50T4 acts AC or DC voltage regulator, to provide the desired voltage values.
Summary
The STB20NM50T4 Power MOSFET is a N-channel Enhancement-mode MOSFET device with an impressive number of application fields. It is mainly used in low-power switching and current-control applications, such as audio amplifiers, voltage steering, controlling electrical motors and it can also be used as a power element to protect other components from reverse voltage damage. Its working principle is based on semiconductor material, such as silicon, and it works by applying a minimal voltage to the gate terminal, resulting in varying current that enables the desired result.
The specific data is subject to PDF, and the above content is for reference
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