Allicdata Part #: | STB20N60M2-EP-ND |
Manufacturer Part#: |
STB20N60M2-EP |
Price: | $ 1.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 13A D2PAK |
More Detail: | N-Channel 600V 13A (Tc) Surface Mount D2PAK |
DataSheet: | STB20N60M2-EP Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.92446 |
Vgs(th) (Max) @ Id: | 4.75V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | MDmesh™ M2-EP |
Rds On (Max) @ Id, Vgs: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB20N60M2-EP Application Field and Working Principle
The STB20N60M2-EP is a high voltage, low gate charge, max RDS(on) reduced and widely used N-channel MOSFET. It is widely used in various applications such as dc-dc voltage converters, battery powered systems and power supplies.Because of its low gate charge and reduced RDS(on) max, this type of MOSFET is highly efficient and reliable.
Application Fields of STB20N60M2-EP
STB20N60M2-EP is an ideal choice for many industries, such as power management, motor control, and automotive applications. This type of MOSFET is used for power supply, voltage regulation, switching and control applications. As its low gate charge, reduced RDS(on) max and high voltage characteristics, it can achieve high power efficiency and extended product life.
Working Principle
The STB20N60M2-EP\'s working principle is based on the single-transistor MOSFET. This type of MOSFET has three terminals - gate, source and drain. The gate is the control terminal which can be used to control the source and drain terminal\'s current flow. When the gate terminal is negative, it will attract electrons, creating an inversion layer at the junction between the source and drain. This inversion layer will control the current flow and voltage across the MOSFET. The higher the negative gate voltage, the stronger the inversion layer, and the more current will flow between the source and drain.
Uses for STB20N60M2-EP
STB20N60M2-EP is widely used for various industrial and commercial applications, such as: power management, motor control, automotive applications, voltage regulation, power supplies, switching and control applications. Its low gate charge and reduced RDS(on) max makes it an ideal choice for these applications, as it provides high power efficiency and extended product life.
Conclusion
In summary, the STB20N60M2-EP is a high voltage, low gate charge, low RDS(on) reduced and widely used N-channel MOSFET. It is widely used in various applications, such as power management, motor control, and automotive applications, as its low gate charge and reduced RDS(on) max provide high power efficiency and extended product life.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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