STB20N90K5

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STB20N90K5 Application Field and Working Principle

The STB20N90K5 is a vertical trench gate field-effect transistors (FETs) produced by STMicroelectronics. This FET is a single, insulated-gate, N-channel FET fabricated on a state-of-the-art vertical trench isolation. It is rated for an excellent maximum DC current rating of 20A and a maximum voltage rating of 900V. Because of its extraordinary capabilities, this FET has a wide range of applications in a variety of electronics and electrical systems.

Applications

The STB20N90K5 FET has a wide variety of applications, ranging from high-efficiency power control systems to logic control devices. Due to its high current, voltage, and power ratings, as well as excellent switching characteristics, this FET can be employed in many highly efficient, switched-mode power supply (SMPS) circuits employed in consumer electronics, automotive and industrial applications. As a high efficiency power control device, this FET can also be used in DC-DC power converters, uninterruptable power supplies (UPS) and solar inverters.

In addition to power control devices, This FET can also be employed in a variety of logic-controlled applications, particularly opto-isolators, logic controllers, and RF control circuits. In logic-controlled applications, this FET is often used to switch between different states of electrical signals and control the power supply of electronic components, such as LEDs and other electronic elements. In RF control circuits, this FET can be used to switch between two different RF channels, allowing for better RF transmission.

Working Principle

The STB20N90K5 is a vertical trench gate FET and works on the principle of hole-electron transport. As electrons enter the FET gate, they create an excess charge, which in turn attracts additional electrons. This, in turn, creates a larger electric field and an increase in voltage across the gate. As the gate voltage increases, the current continues to flow through the FET, allowing for the current to be adjusted. As the voltage decreases, the flow of current is reduced, allowing the FET to be used in power control applications.

When this FET is used in logic-control applications, the electric field created by the gate voltage can be used to switch between two states, thereby controlling the power to the component. In RF control applications, this electric field created by the gate voltage can be used to switch between two different RF channels, allowing for better RF transmission.

Conclusion

The STB20N90K5 is a vertical trench gate FET from STMicroelectronics that has a wide range of applications, whether in high-efficiency power control systems or logic-controlled applications. Its large current, voltage, and power ratings make it suitable for many high-efficiency SMPS systems and other power control circuits. It also has excellent switching characteristics, making it a suitable choice for logic-controlled devices and RF control circuits. Its operation is based on the principle of hole-electron transport, where electrons entering the FET gate lead to an increase in the gate voltage, which can be used to control the power to various components.

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