STB23NM60N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STB23NM60N is a high voltage, high-speed N-channel MOSFET (metal oxide semiconductor field effect transistor). It has a high Current Transfer Ratio (CTR) that can reach up to 55% when provided with a low-level input signal. It is also capable of providing up to 260A/180V power in unclamped conditions, achieved with a fast rise time of 325ps and a very low on-state resistance of just 27mΩ. Being a member of STMicroelectronics’ low RDS(ON) MOSFET family, STB23NM60N is ideal for power conversion and motor control applications in home appliances, servers, and industrial equipment including lighting, server power supplies, and SMPS.

The STB23NM60N is optimized for applications up to 650V, making it ideal for higher speed and higher efficiency power solutions. When driving an inductive load, the MOSFET automatically enters the current-limiting state and the drain-source current is quickly reduced to a pre-defined value, usually 50A, which reduces the maximum current. In comparison, the device provides up to 23A switching current when driving only a resistive load. Moreover, with its low gate charge and low total gate charge, the STB23NM60N is able to operate at a smaller forward drop and lower overall power losses, leading to enhanced performance and efficiency and longer life.

The STB23NM60N features a guaranteed avalanche ruggedness, which is the rate of safe current flow that the MOSFET can sustain without exceeding a given maximum on-resistance. This is set by the device’s body diode, which is a safety feature designed to protect the MOSFET by providing a low resistance alternative to the main device when it experiences a large negative body voltage. Moreover, the device is constructed according to STMicroelectronics’ Lead-Free, RoHS-compliant production processes, ensuring environmental protection and excellent reliability.

STB23NM60N works by using a gate to control the flow of electrons through the device. The flow of electrons can be turned on and off by controlling the voltage applied to the gate. When the gate voltage of the STB23NM60N is above a certain threshold, it allows a current to flow between the drain and the source. Due to its high Current Transfer Ratio, the STB23NM60N is able to convert a low-level signal into a high-current output. This makes it ideal for controlling high-power loads in applications such as switching converters, motor-drive programs, and more.

Due to its superior design, high speed, and high efficiency, the STB23NM60N is suitable for a wide range of applications. It can be used in lighting, home appliances, HVAC systems, server power supplies, and general SMPS circuitry. As it offers a wide working voltage range, low temperature sensibility, and superior performances, the STB23NM60N is the perfect solution for high-speed and high-efficiency power applications.

The specific data is subject to PDF, and the above content is for reference