STB24NM60N Allicdata Electronics
Allicdata Part #:

497-11211-2-ND

Manufacturer Part#:

STB24NM60N

Price: $ 2.18
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 17A D2PAK
More Detail: N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D2...
DataSheet: STB24NM60N datasheetSTB24NM60N Datasheet/PDF
Quantity: 1000
1 +: $ 2.18000
10 +: $ 2.11460
100 +: $ 2.07100
1000 +: $ 2.02740
10000 +: $ 1.96200
Stock 1000Can Ship Immediately
$ 2.18
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 190 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STB24NM60N is a N-channel power MOSFET (metal oxide semiconductor field effect transistor). It is a single, high voltage device that is able to switch large currents while controlling current flow through a circuit. This MOSFET has two important features: the ability to switch a high current on and off quickly, and the ability to operate with a low voltage and provide a high level of power conversion efficiency.

STB24NM60N is primarily used for power applications. It is ideal for powering motors, switching high-powered loads, controlling power levels to high-current electrical devices, and other signal conditioning and signal isolation applications. The STB24NM60N MOSFET is specifically designed for use in automotive, computing, and consumer electronics applications.

The most basic working principle of the STB24NM60N is the transfer of heat from one material to another. When a voltage is applied across the MOSFET, heat is transferred from the source to the drain, causing electrons to be transferred from the source to the drain. This produces an effect known as electrical conduction, allowing current to flow between the two points.

The STB24NM60N features a low on-resistance, which allows it to efficiently switch high currents. This provides the transistor with a high switching speed, low turn-on and turn-off times, and a linear conduction path. In addition, the STB24NM60N features a high voltage gate that is able to withstand up to 24V, making it suitable for use in applications with high voltages.

The STB24NM60N also offers a temperature protection feature which ensures that the transistor does not overheat. It also provides a low gate-source capacitance for reducing switching loss and power consumption. Additionally, the STB24NM60N uses MOSFETs with a two-layer metal gate structure which reduces gate leakage current and increases operating temperature range.

Overall, the STB24NM60N is a versatile, high-performance MOSFET suitable for a wide range of power applications. Its low on-resistance, low gate-source capacitance, and temperature protection features make it an ideal choice for powering motors, switching high-powered loads, and controlling high current electrical devices. As a result, the STB24NM60N is a perfect choice for any application where power switching efficiency, reliability, and durability are essential.

The specific data is subject to PDF, and the above content is for reference

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