Allicdata Part #: | 497-7002-2-ND |
Manufacturer Part#: |
STB24NM65N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 19A D2PAK |
More Detail: | N-Channel 650V 19A (Tc) 160W (Tc) Surface Mount D2... |
DataSheet: | STB24NM65N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB24NM65N is a N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) designed specifically for driving low-voltage, high-current loads. This device is well suited for applications such as dc-to-dc converters and in motor control circuits.
The STB24NM65N makes use of a vertical MOSFET cell structure, which enables the device to have significantly less on-resistance than a standard planar MOSFET. This means that the device can deliver more current with less power loss. Additionally, the STB24NM65N has extremely low output capacitance and reverse recovery times, making it ideal for applications that require fast switching speeds.
The STB24NM65N is available in a variety of packages, including a TO-220 package, a TO-252 package, and a SOT-223 package. Each package offers various levels of power dissipation and on-resistance. Additionally, the device is rated to operate at a wide range of temperatures, ranging from −40°C to +125°C.
The STB24NM65N works in a similar way to a standard MOSFET. When there is an input voltage applied to the gate of the MOSFET, there is an electric field generated. This electric field attracts the electrons from the source to the drain, creating a current path between the two terminals. The MOSFET can be used to amplify current or voltage, depending on the circuit in which it is used.
The STB24NM65N has a maximum gate-source voltage (Vgs) of ± 20V and a maximum drain current (Id) of 24A. The device also has an on-state resistance (Rd) of 0.3Ω, making it highly efficient at higher currents while still having a very low Rd. The maximum drain-source breakdown voltage (BVdss) of 200V also makes the device well-suited for many higher voltage applications. For example, it can be used in power supplies and dc-to-dc converters, as well as in automotive electronics.
In summary, the STB24NM65N is a vertical MOSFET that offers significant advantages over standard planar MOSFETs. It has a low on-resistance and output capacitance, making it ideal for high-current, high-bandwidth applications. The device is available in a variety of packages, making it well-suited for a wide range of different applications. Furthermore, its wide operating temperature range and high drain-source breakdown voltage makes it suitable for many higher voltage applications. The STB24NM65N is a great choice for applications such as dc-to-dc converters and power supplies, as well as in motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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