STB25N80K5

Vgs(th) (Max) @ Id:	5V @ 100µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	SuperMESH5™
Rds On (Max) @ Id, Vgs:	260 mOhm @ 19.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	19.5A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STB25N80K5 is an N-channel enhancement mode power MOSFET developed using the ST patented STripFET™ series process. This process, making use of STripFET™ series process, introduces a strontium barrier in the specific area and under the source, therefore preventing the backflow of injected carriers in the off state and attain low-on-resistance values regardless of the temperature. The STB25N80K5 can be used for different purposes such as in amplifiers, analog circuits, power supplies, DC-DC converters. Application Field and Working PrincipleThe STB25N80K5 is a Enhancement Mode MOSFET Power Transistor which can be used in a variety of applications. The device is primarily used in power switching and making power supply designs more efficient while providing better reliability. The device has a typical drain source voltage rating of 800V. This high voltage rating results in higher switching power and lower conduction losses.The STB25N80K5 needs to be controlled with a Gate-Source voltage greater than 10V, which makes it suitable for designs requiring high breakdown voltage and high temperature operation. Moreover, its operating temperature range is from -55°C to 175°C making it suitable for applications in harsh ambient temperature.The STB25N80K5 is a single N-channel enhancement mode MOSFET, the basic principle of operation of the device is the same as for standard MOSFET. When the gate is forward biased and a positive voltage is applied to it, electrons from the source region migrate across the oxide region and form a channel between source and drain regions. This channel will vary in its conductivity as the voltage on the gate is adjusted or changed. When the channel is fully opened, the resistance between source and drain is at its minimum and thus maximum current is allowed to flow through the transistor. Conversely when the gate is reverse biased, i.e. a negative voltage is applied to it, then the channel collapses thus preventing current flow between source and drain.In order to achieve maximum efficiency and power conversion, the STB25N80K5 can be used in combination with the freewheeling diode, where the freewheeling diode helps in dissipating the stored energy in the circuits during transition time. Furthermore, its high drain-source scale of up to 800V allows for usage in wide range of voltage and wattage ratings.Conclusion The STB25N80K5 is an N-channel Enhancement Mode MOSFET transistor which is widely used for power switching and other power supply applications. It has a typical drain-source voltage of 800V, which makes it suitable for designs requiring high breakdown voltage and high temperature operation. Additionally, the device has a wide operating temperature range from -55°C to 175°C and is often used in combination with a freewheeling diode in order to achieve maximum efficiency and power conversion. Thus, it heavily utilized by designers to make power supply designs more efficient while providing better reliability.

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