Allicdata Part #: | 497-5729-ND |
Manufacturer Part#: |
STB25NM50N-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 22A I2PAK |
More Detail: | N-Channel 500V 22A (Tc) 160W (Tc) Through Hole I2P... |
DataSheet: | STB25NM50N-1 Datasheet/PDF |
Quantity: | 3 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2565pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STB25NM50N-1 is a FET created for a wide range of applications. It is a single structure FET that is extremely reliable, allowing it to be used in applications in various industries. The product features a molybdenum aluminum source terminal and a source follower structure, which makes it ideal for a variety of industrial electrical projects.
The STB25NM50N-1 is made with a NanoMOS technology process. It is designed to significantly reduce current leakage and improve switching performance while maintaining high current handling capabilities. It is also made to be light and thin, providing superior space savings.
The STB25NM50N-1 has a maximum drain-source voltage of 500 Volts and a drain current of 25 Amps (single pulse). The formulation of the design includes a high speed switching performance, with a fast switching frequency of up to 200kHz, as well as a wide thermal operating temperature range from -55°C to 150°C.
This performance is achieved through the state-of-the-art design of the STB25NM50N-1. The FET utilizes N-channel MOSFETs for high efficiency current flow. It is capable of providing superior switching speed, up to 200kHz, with extremely low on-resistance. This allows it to provide high current handling capabilities, while at the same time reducing power loss.
The STB25NM50N-1 also has superior thermal performance. Combined with its low gate charge, the product is designed to minimize losses and maximize efficiency in a wide range of electrical applications. Additionally, the product’s light and thin design allows it to be mounted onto heatsinks, making it even more efficient.
The STB25NM50N-1 is a FET designed for a wide range of applications and industries. It is made with a NanoMOS technology process, giving it superior performance and reliability. Its low on-resistance and high speed switching makes it ideal for applications requiring high current handling capabilities. Additionally, the product’s wide thermal operating temperature range makes it well suited for a variety of applications. The STB25NM50N-1 is ideal for any electrical application requiring superior precision, efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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