Allicdata Part #: | 497-17546-2-ND |
Manufacturer Part#: |
STB26N60M2 |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CHANNEL 600V 20A D2PAK |
More Detail: | N-Channel 600V 20A (Tc) 169W (Tc) Surface Mount D2... |
DataSheet: | STB26N60M2 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.21716 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 169W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1360pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB26N60M2 Application Field and Working Principle
STB26N60M2 is a type of single metal–oxide–semiconductor field-effect transistor (MOSFET). It is a voltage controlled semiconductor device that acts as a switch in certain semiconductor-based electronic circuits. The MOSFET has a wide application field in many aspects, including power electronics, telecommunication, motor-driving, robotics, and audio-video equipment, etc. To under the STB26N60M2 working principle and application field better, we will first take a look of a general working principle of MOSFETs and the advantages of using a MOSFET.
General Working Principle of MOSFETs
The MOSFET consists of two main elements: a semiconductor channel that is covered by a metal oxide gate. The two electrodes that are connected to the channel are the source (S) and drain (D). The voltage applied to the gate electrode forms an electric field that controls the conductivity of the channel. The electric field controls the number and types of charge carriers that can pass through the channel, so that if the gate voltage is positive, the transistor is "OFF" and the channel is blocked, and if the gate voltage is negative, the transistor is "ON" and the channel is opened and equipped for conducting.
The operation of the STB26N60M2 can be described with a four-step gate current flow. First, owing to the applied gate-source voltage, the gate-source capacitance (Cgs) will charge to the gate voltage. Then the voltage applied to the drain-gate capacitance (Cgd) will induce a current, charging it up to the gate voltage. Thirdly, this gate current is then driven by the drain-source voltage and the gate-source current will be increased, thereby charging up the gate-source capacitance again. Finally, the drain-source current will be increased accordingly.
Advantages of Using MOSFETs
The MOSFET has some major advantages over the bipolar junction transistors and junction field effect transistors. Firstly, its input impedance is higher, which makes it easier to drive a load. Secondly, MOSFETs can have much lower input capacitance, which minimizes the time-delay and increases the maximum frequency of the circuits. Thirdly, MOSFETs can be built in much smaller sizes with much lower power dissipation, which makes them ideal for low-power semiconductor applications. Lastly, the MOSFET is also capable of providing much higher gain as compared to other transistors.
Application Field of STB26N60M2
The STB26N60M2 is a type of enhancement-mode N-channel MOSFET. This type of MOSFET is widely used in power electronics, due to its low on-state resistance and its capability to operate at high frequencies. It is often used to regulate the voltage, current and power of a circuit, by switching the current flow on and off. For example, STB26N60M2 can be used in motor-driving and audio-video equipment, as well as telecommunication and robotics applications. Additionally, it can also be used in power reduction circuits, as it can achieve a lower standby current than other types of MOSFETs.
In conclusion, the MOSFET is a versatile semiconductor device that has a wide application field in many aspects. The STB26N60M2 is a type of N-channel MOSFET, which is used in power electronics due to its low on-state resistance and its ability to work at high frequencies. It can be used in motor-driving, telecommunication, audio-video equipment, robotics, and power reduction circuits, to regulate the voltage, current, and power. With the advantages of MOSFETs, it is no doubt that they will still play an important role in electric circuits in the future.
The specific data is subject to PDF, and the above content is for reference
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