Allicdata Part #: | STF20N60M2-EP-ND |
Manufacturer Part#: |
STF20N60M2-EP |
Price: | $ 0.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V TO-220FP |
More Detail: | N-Channel 600V 13A (Tc) Through Hole TO-220FP |
DataSheet: | STF20N60M2-EP Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.90136 |
Vgs(th) (Max) @ Id: | 4.75V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | MDmesh™ M2-EP |
Rds On (Max) @ Id, Vgs: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The STF20N60M2-EP is a N-channel, 600V, 20A, Field Effect Transistor (FET) produced by ST Microelectronics. This type of FET is distinguished by its small form factor, good heat resistance, low on-resistance, and high frequency capability. These features make it an ideal choice for advanced power applications, such as in motor drives and LED lighting.
A Field Effect Transistor (FET) is a type of transistor that operates by controlling the flow of electric current between two strong semiconductor regions. It is different from a bipolar junction transistor (BJT) because while a BJT’s current is controlled on the basis of the voltage between the collector and the base, a FET’s current is controlled by the voltage applied between the gate and the source. FETs are stable and reliable, and have been used in many applications for many years.
Working Principle of the STF20N60M2-EP FET
When a positive voltage is applied between the gate and source, the electrons are attracted toward the gate, which allows current to pass between the source and the drain. This is what is called the “on” state, and is the basis of the STF20N60M2-EP’s functionality. In the “off” state, the electrical field between the gate and source is reversed. This repels the electrons away from the gate, thus preventing current flow between the source and the drain.
Applications of the STF20N60M2-EP FET
The STF20N60M2-EP FET is an ideal device for applications where high power and/or switching speed is required. It is typically used in high performance DC-DC converters, such as those used in solar cells and computer server systems. It is also used in motor drives, LED lighting, and Appliances. Its features, such as its fast switching speed, improved accuracy, better energy efficiency, and higher power handling capabilities, give engineers and designers a wide selection of possibilities for their power needs.
Conclusion
The STF20N60M2-EP FET is a great device for high power applications. Its small form factor, good heat resistance, low on-resistance, and high frequency capability make it an ideal choice for advanced power applications. It is used in motor drives, LED lighting, DC-DC converters, and more. It is an excellent choice for anyone looking for a reliable, efficient, and high performance device.
The specific data is subject to PDF, and the above content is for reference
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