STF25NM50N Allicdata Electronics
Allicdata Part #:

497-4655-5-ND

Manufacturer Part#:

STF25NM50N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 22A TO220FP
More Detail: N-Channel 500V 22A (Tc) 40W (Tc) Through Hole TO-2...
DataSheet: STF25NM50N datasheetSTF25NM50N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STF25NM50N is a high-power N-channel MOSFET designed to handle moderate to high power switching applications. This type of MOSFET is quite popular in the field of power electronics due to its versatile applications, which range from switching high-power loads to controlling electric motor speeds.

It is primarily composed of a silicon substrate, a gate electrode, and a source and drain. This particular MOSFET is composed of two N-type silicon layers, forming the N-channel. As electric current flows from the source to the drain, the silicon substrate can be thought of as creating an electric field between the gate electrode and itself, which serves as the switching device. This electric field modulates the flow of electric current, allowing the MOSFET to either conduct or block the flow of electric current depending on the external voltage applied to the gate.

The STF25NM50N MOSFET has a drain source voltage (VDS) rating of 25V, meaning it can handle a maximum voltage of 25V between its drain and its source. In addition, it has a drain current rating (ID) of 50A, meaning it can handle a continuous current of up to 50A between its drain and its source. Its on-state resistance (RDS(on)) is rated at 0.6Ω, meaning it has a very low internal resistance, which results in low voltage drops and better current conduction for more efficient power conversion.

The STF25NM50N is an ideal choice for high-power applications, such as motor control, DC-DC converters, power inverters, and switching power supplies. It can also be used for audio amplifier circuits, as the low on-state resistance allows for optimal audio signal quality by maintaining a low voltage drop throughout the circuit. Additionally, its low gate threshold voltage allows for improved heat dissipation, which is beneficial in applications where high temperature or frequent switching is a concern.

Overall, the STF25NM50N has a wide range of applications, making it a popular choice among power electronics engineers. With its durable construction and versatile applications, it is a reliable and convenient choice for projects ranging from small-scale switching to large-scale power conversions.

The specific data is subject to PDF, and the above content is for reference

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