STF26NM60N Allicdata Electronics
Allicdata Part #:

497-11886-5-ND

Manufacturer Part#:

STF26NM60N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 20A TO-220F
More Detail: N-Channel 600V 20A (Tc) 35W (Tc) Through Hole TO-2...
DataSheet: STF26NM60N datasheetSTF26NM60N Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF26NM60N is a HEXFET Power MOSFET designed specifically to operate in an environment with extreme temperature conditions. This type of MOSFET is ideal for use in demanding power applications, such as in high power switching, motor control, and DC-DC converters. The device has a 600V drain-source voltage rating and can deliver a maximum continuous drain current of 59A, making it one of the most capable single-channel devices on the market.

The STF26NM60N has several advantageous features compared to other MOSFETs in its class. It has very low on-resistance for good conduction and power efficiency, as well as fast switching time for improved system responsiveness. In addition, its body diode has a very high forward conduction current for superior surge handling. The device also has improved avalanche capability for better system reliability.

Application fields for the STF26NM60N can be found in many consumer and industrial applications. In the consumer space, this device is often used in consumer-grade switching systems and motor control. For industrial applications, the device is used in high-power UPS systems, welding equipment, and heavy-duty machining and drilling equipment. The device is also used in various industrial and automotive applications, such as high-power motor control, DC bus voltage regulation, DC-DC conversion, and HVAC systems.

The working principle of the STF26NM60N HEXFET Power MOSFET is pretty straightforward. This type of device is basically an electronic switch, which means it’s designed to control the flow of current. The device works by turning on and off in response to an input signal, which can be a small voltage or current. When the device is turned on, the channel between the drain and source terminals opens up and current can flow. This allows for high-power applications to be controlled with low input voltages or currents.

The STF26NM60N has a high input capacitance for very fast switching, making it ideal for high-speed switching applications. The device also has a very low output capacitance, which results in improved power efficiency. In addition, the body diode provides protection in the event of a high drain-source voltage, which is essential in high voltage applications. All of these features make the STF26NM60N an excellent choice for applications that require high power and high speed.

The specific data is subject to PDF, and the above content is for reference

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