STF2N62K3 Allicdata Electronics
Allicdata Part #:

497-12247-ND

Manufacturer Part#:

STF2N62K3

Price: $ 1.17
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 620V 2.2A TO-220FP
More Detail: N-Channel 620V 2.2A (Tc) 20W (Tc) Through Hole TO-...
DataSheet: STF2N62K3 datasheetSTF2N62K3 Datasheet/PDF
Quantity: 1049
1 +: $ 1.17000
10 +: $ 1.13490
100 +: $ 1.11150
1000 +: $ 1.08810
10000 +: $ 1.05300
Stock 1049Can Ship Immediately
$ 1.17
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: SuperMESH3™
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 620V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STF2N62K3 is a N-Channel MOSFET transistor manufactured by STMicroelectronics. It is designed primarily for low-voltage, low-power applications. The device is available in 3-pin TO-220 packaged plastic, ideal for use in audio amplifiers, switching applications, and general purpose power supplies.

This N-Channel MOSFET provides very low on-resistance and very low capacitance characteristics due to its advanced MOSFET technology. It consists of a single N-channel device and is designed for maximum system efficiency, low power losses, excellent thermal stability, and minimal noise and distortion.

The STF2N62K3 is a low-threshold device with enhanced gate-to-source breakdown voltage (BVDSS) and low VGS(on) rating – both characteristics important in power applications. The device achieves these performance levels without compromising thermal performance because of its superior construction and advanced packaging.

The STF2N62K3 application field mainly covers Audio amplifiers and switching power supplies. Audio amplifiers require an efficient system, low power losses and reduced thermal noise. The STF2N62K3 provides excellent performance meeting the needs of audio amplifier designs. Additionally, in switching power supplies, the lower on-resistance achieved by the STF2N62K3 leads to improved efficiency and low power losses, making it an ideal choice.

The STF2N62K3 working principle is simple and involves the transfer of electrons between a source electrode and a drain electrode of the device, while electrons are being transferred from the gate electrodes to the channel, thereby controlling the flow of electrons. The energy transferred through the STF2N62K3 MOSFET is determined by the applied voltage, the resistance of the channel, the capacitance of the system, the size of the transistor, and the cross-sectional area of the channel.

When voltage is applied to the gate, a field is created between the gate and the channel, and under this field, the electrons start to accumulate at the point of contact. This accumulation reduces the resistance of the channel, allowing the electrons to flow from the source to the drain. As the voltage increases, the resistance of the channel decreases, resulting in more electrons flowing from the source to the drain.

The STF2N62K3 provides excellent control of the electron flow, providing an amplifier with low distortion and low power losses. The device also has a high switching speed, making it an ideal choice for audio applications. Additionally, the device is highly reliable, providing a long-lasting performance.

The STF2N62K3 is an ideal choice for applications such as audio amplifiers and switching power supplies. With its superior performance, low power losses and high reliability, the STF2N62K3 is an excellent choice for any design consideration.

The specific data is subject to PDF, and the above content is for reference

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