STF26NM60N-H

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	165 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The STF26NM60N-H is a single N-channel enhancement-mode vertical field effect transistor (FET) optimized for high-efficiency, low-power applications. The device is capable of providing over 4A of continuous drain current in a very small form factor. Its features include low Rds(on), wide dynamic response range, low gate charge, and low threshold voltage.The STF26NM60N-H has a package size that is smaller than the traditional TO-220, making it ideal for high-density applications. The design enables this FET to be used in circuits needing more current than can be provided by standard MOSFETs. It is also able to operate at higher power switching frequencies, making it ideal for use in applications such as switching power supplies, DC-DC converters, and motor control circuits.The STF26NM60N-H is a vertical field effect transistor (FET) that is designed to provide excellent performance in high speed switching applications. The device is manufactured using a vertical DMOS process to provide superior electrical performance. The device uses a single gate electrode for control, meaning that the gate voltage applied to this device will be directly proportional to the drain current. This FET can also be used in linear applications, as its maximum dissipated power is higher than standard MOSFETs.The primary application of the STF26NM60N-H is in high-efficiency, low-power applications. It is specifically designed for use in switching power supplies and DC-DC converters, as its low gate charge, wide dynamic response range, and low threshold voltage make it ideal for these applications. The FET is also well suited for use in motor control circuits. Its ease of use and very small form factor also make it ideal for use in high density applications, such as in digital circuit designs.The working principle of the STF26NM60N-H is simple. It operates as an enhancement-mode FET, meaning that the gate terminal is isolated from the rest of the device. Therefore, the drain current is determined by the gate voltage applied to the gate terminal, and the source resistance of the device. When the gate voltage is increased, the drain current will increase accordingly, and when the gate voltage is decreased the drain current will decrease.The STF26NM60N-H is a single N-channel enhancement-mode vertical field effect transistor that is optimized for high-efficiency, low-power applications such as switching power supplies and motor control circuits. The device offers superior electrical performance, low gate charge, wide dynamic range, and very small form factor, making it ideal for high-density applications. The device is easy to use and provides excellent results in high speed switching applications, as well as linear applications.

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