STF2NK60Z

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	20W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	170pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Series:	SuperMESH™
Rds On (Max) @ Id, Vgs:	8 Ohm @ 700mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.4A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The STF2NK60Z is a low on-resistance N-channel MOSFET commonly used in electronic devices. This type of device is an insulated-gate field-effect transistor (IGFET), which is one of the most common types of transistors used in modern electronics. It is a 60 volt, 2.5A transistors in a plastic TO-220 package and is capable of handling a maximum drain-source voltage of 60V and a maximum drain current of 2.5A. In addition, the STF2NK60Z also features a low on-resistance of 0.034Ω, an On-Current of 2.4 A, and a maximum power dissipation of 8W. The STF2NK60Z is one of the most popular transistors in the industry, which makes it a versatile device for a wide range of applications.

Application Field

The STF2NK60Z is used in a wide range of applications, including switching and amplification, digital logic, power conversion, voltage regulation and motor control. In switching applications, the N-channel device can be used to control the flow of current in either the ground or power states. In amplification applications, the device is used to increase the signal level, while in digital logic devices, the device can be used to control the logic states. Moreover, the STF2NK60Z can also be used in power conversion and voltage regulation applications, such as rectifiers and DC-DC converters. Furthermore, the STF2NK60Z can also be used in motor control applications, where it can be used to control the direction and speed of an electric motor.

Working Principle

The STF2NK60Z is a type of field effect transistor (FET), whose working principle is based on a phenomenon called the “channel effect.” When a voltage is applied between the source and the drain of the device, an electric field is created across the device and this field influences the conductivity of the “channel” between the source and the drain. When the electric field is large enough, it will cause the electrons to flow through the channel, thus allowing current to flow through the device. This phenomenon is known as the “channel effect” and is responsible for the operation of FETs.The STF2NK60Z is a low on-resistance MOSFET, which means that the device has a low drain-source resistance when it is turned on, making it ideal for applications that require high power efficiency. As the drain-source voltage increases, the resistance will naturally increase as well. This type of MOSFET can support a maximum drain-source voltage of 60V and a maximum drain current of 2.5A.

Conclusion

The STF2NK60Z is a low on-resistance N-channel MOSFET commonly used in electronic devices. It is a 60 volt, 2.5A transistors in a plastic TO-220 package and is capable of handling a maximum drain-source voltage of 60V and a maximum drain current of 2.5A. The STF2NK60Z is used in a wide range of applications, including switching and amplification, digital logic, power conversion, voltage regulation and motor control. Its working principle is based on the “channel effect”, which is responsible for the operation of FETs. Its low on-resistance makes the STF2NK60Z an ideal device for applications that require high power efficiency.

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