Allicdata Part #: | 497-5004-5-ND |
Manufacturer Part#: |
STF21NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 17A TO-220FP |
More Detail: | N-Channel 600V 17A (Tc) 30W (Tc) Through Hole TO-2... |
DataSheet: | STF21NM60N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF21NM60N is a power N-Channel MOSFET product from STMicroelectronics. It has a maximum drain-source resistance (Rdson) of 0.19µΩ and can support an output current of up to 20A. This makes the STF21NM60N an ideal choice for applications that require both high efficiency and power density.
The STF21NM60N is a single N-channel power MOSFET. It is built using STMicroelectronics’ STripFET III Technology, which is a vertical power MOSFET technology that combines power performance and low on-resistance. This, coupled with its low Rdson, makes the STF21NM60N ideal for various applications.
The STF21NM60N is mainly used as a switch in a circuit. This is because of its low Rdson and the ability to support an output current of up to 20A. Additionally, it is suitable for use in high-current applications, such as motor and solenoid drivers. Furthermore, its compatibility with a wide range of integrated circuits, such as logic drivers and motor control processors, makes it a great choice for many applications.
The STF21NM60N also has a low thermal resistance (Rth) in both the junction-to-ambient and junction-to-case directions. This makes it ideal for use in high-power applications, where a low Rth is essential for efficient cooling. Additionally, the STF21NM60N has a logic-level control input and is configured with a 3.3V-tolerant gate so that it can be used in low-voltage applications.
The STF21NM60N operates by allowing an electric charge to flow through an external circuit when a positive voltage is applied at the gate. When the gate voltage is high, it causes the electrons to move in the channel between the source and the drain and form an inversion layer in the gate area. This inversion layer is capable of conducting current and allows for the flow of electrons between the source and the drain.
When the gate voltage is negative, the electrons in the inversion layer near the gate are pushed away and the electric charge is blocked from flowing through the external circuit. This turns off the MOSFET, which allows for the use of the STF21NM60N as a switch. Additionally, the STF21NM60N can be used in an analog fashion, where the gate voltage can be adjusted to allow for a linear increase or decrease in the drain current.
Overall, the STF21NM60N is an excellent choice for a wide range of applications due its low Rdson, low Rth and logic-level control input. It is especially suitable for high-current applications, such as motor and solenoid drivers, as well as low-voltage applications. Additionally, its compatibility with a wide range of integrated circuits make it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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