STF26NM60ND Allicdata Electronics
Allicdata Part #:

497-14269-5-ND

Manufacturer Part#:

STF26NM60ND

Price: $ 5.01
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 21A TO220FP
More Detail: N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-2...
DataSheet: STF26NM60ND datasheetSTF26NM60ND Datasheet/PDF
Quantity: 97
1 +: $ 4.54860
10 +: $ 4.09185
Stock 97Can Ship Immediately
$ 5.01
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 54.6nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 175 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STF26NM60ND is a type of metal-oxide semiconductor field-effect transistor (MOSFET). This MOSFET is a single-gate type and has an output current capability of 26 amperes and a maximum drain-source voltage of 600 volts. This makes it suitable for applications such as power supplies, automotive controls, or any other applications that require high switching frequencies, low input impedance, and low gate current.

MOSFETs are four-terminal devices consisting of an insulated gate, a source, a drain, and a body (or substrate). When the gate is electrically charged, it creates a thin layer of conducting (or partially conducting) material. When the gate voltage increases, this thin layer gets wider and the current flow between drain and source increases. Conversely, when the gate voltage decreases, the current flow between drain and source decreases.

In the case of the STF26NM60ND, it has a low input impedance and can handle high-frequency signals up to 240 kHz. Since the source and drain are connected through the oxide layer, it has a high output impedance which makes the device suitable for pulse-width modulation applications and high-resolution voltage and current control.

The STF26NM60ND also provides very low on-resistance, which allows for higher switching speeds. With its high current capability (up to 26 A), it is suitable for a wide range of other applications such as DC-DC converters and power supplies. Additionally, its low gate and drain-source capacitance make it suitable for high-frequency switching applications.

The STF26NM60ND utilizes a low-noise operation and low gate charge characteristic, and it also displays excellent short circuit and thermal performance. This makes it suitable for applications that require fast switching speed, low power consumption, and robust performance, including higher power dc-dc converters, power factor correction, and motor control.

In summary, the STF26NM60ND MOSFET is a single-gate device, with a high current capability and low input impedance, suitable for high-frequency switching applications, and excellent short circuit and thermal performance. This makes it suitable for a wide range of applications, such as power supplies, automotive controls, dc-dc converters, and motor control.

The specific data is subject to PDF, and the above content is for reference

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